| 9484470 |
Method of fabricating a GaN P-i-N diode using implantation |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Donald R. Disney |
2016-11-01 |
| 9450112 |
GaN-based Schottky barrier diode with algan surface layer |
Thomas R. Prunty, David P. Bour, Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards +2 more |
2016-09-20 |
| 9330918 |
Edge termination by ion implantation in gallium nitride |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more |
2016-05-03 |
| 9324844 |
Method and system for a GaN vertical JFET utilizing a regrown channel |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more |
2016-04-26 |
| 9318619 |
Vertical gallium nitride JFET with gate and source electrodes on regrown gate |
Donald R. Disney, Hui Nie, Isik C. Kizilyalli |
2016-04-19 |
| 9318331 |
Method and system for diffusion and implantation in gallium nitride based devices |
David P. Bour, Isik C. Kizilyalli, Thomas R. Prunty, Linda Romano, Andrew P. Edwards +2 more |
2016-04-19 |
| 9306050 |
III-V semiconductor structures including aluminum-silicon nitride passivation |
James R. Shealy |
2016-04-05 |
| 9299821 |
Gated III-V semiconductor structure and method |
James R. Shealy |
2016-03-29 |
| 9287389 |
Method and system for doping control in gallium nitride based devices |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more |
2016-03-15 |
| 9269793 |
Method and system for a gallium nitride self-aligned vertical MESFET |
Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour |
2016-02-23 |