Issued Patents 2016
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9508838 | InGaN ohmic source contacts for vertical power devices | Andrew P. Edwards, Dave P. Bour, Isik C. Kizilyalli | 2016-11-29 |
| 9502544 | Method and system for planar regrowth in GaN electronic devices | Isik C. Kizilyalli, David P. Bour | 2016-11-22 |
| 9450112 | GaN-based Schottky barrier diode with algan surface layer | Richard J. Brown, Thomas R. Prunty, David P. Bour, Isik C. Kizilyalli, Hui Nie +2 more | 2016-09-20 |
| 9412899 | Method of stress induced cleaving of semiconductor devices | Scott Brad Herner, Daniel Bryce Thompson, Martin F. Schubert | 2016-08-09 |
| 9330918 | Edge termination by ion implantation in gallium nitride | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2016-05-03 |
| 9324844 | Method and system for a GaN vertical JFET utilizing a regrown channel | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2016-04-26 |
| 9318331 | Method and system for diffusion and implantation in gallium nitride based devices | David P. Bour, Richard J. Brown, Isik C. Kizilyalli, Thomas R. Prunty, Andrew P. Edwards +2 more | 2016-04-19 |
| 9287468 | LED submount with integrated interconnects | Scott Brad Herner, Daniel Bryce Thompson, Martin F. Schubert | 2016-03-15 |
| 9287389 | Method and system for doping control in gallium nitride based devices | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour, Richard J. Brown +1 more | 2016-03-15 |
| 9281442 | III-nitride nanowire LED with strain modified surface active region and method of making thereof | Sungsoo Yi, Patrik Svensson, Nathan Gardner | 2016-03-08 |