Issued Patents 2016
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9525039 | Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer | Isik C. Kizilyalli, Thomas R. Prunty, Hui Nie, Quentin Diduck, Ozgur Aktas | 2016-12-20 |
| 9508838 | InGaN ohmic source contacts for vertical power devices | Linda Romano, Andrew P. Edwards, Isik C. Kizilyalli | 2016-11-29 |
| 9472684 | Lateral GaN JFET with vertical drift region | Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli, Thomas R. Prunty | 2016-10-18 |