| 9508838 |
InGaN ohmic source contacts for vertical power devices |
Linda Romano, Dave P. Bour, Isik C. Kizilyalli |
2016-11-29 |
| 9484470 |
Method of fabricating a GaN P-i-N diode using implantation |
Isik C. Kizilyalli, Hui Nie, Richard J. Brown, Donald R. Disney |
2016-11-01 |
| 9472684 |
Lateral GaN JFET with vertical drift region |
Hui Nie, Isik C. Kizilyalli, Dave P. Bour, Thomas R. Prunty |
2016-10-18 |
| 9450112 |
GaN-based Schottky barrier diode with algan surface layer |
Richard J. Brown, Thomas R. Prunty, David P. Bour, Isik C. Kizilyalli, Hui Nie +2 more |
2016-09-20 |
| 9397186 |
Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back |
Madhan Raj, Brian Alvarez, David P. Bour, Hui Nie, Isik C. Kizilyalli |
2016-07-19 |
| 9330918 |
Edge termination by ion implantation in gallium nitride |
Isik C. Kizilyalli, Hui Nie, Linda Romano, David P. Bour, Richard J. Brown +1 more |
2016-05-03 |
| 9324844 |
Method and system for a GaN vertical JFET utilizing a regrown channel |
Isik C. Kizilyalli, Hui Nie, Linda Romano, David P. Bour, Richard J. Brown +1 more |
2016-04-26 |
| 9318331 |
Method and system for diffusion and implantation in gallium nitride based devices |
David P. Bour, Richard J. Brown, Isik C. Kizilyalli, Thomas R. Prunty, Linda Romano +2 more |
2016-04-19 |
| 9287389 |
Method and system for doping control in gallium nitride based devices |
Isik C. Kizilyalli, Hui Nie, Linda Romano, David P. Bour, Richard J. Brown +1 more |
2016-03-15 |
| 9269793 |
Method and system for a gallium nitride self-aligned vertical MESFET |
Richard J. Brown, Isik C. Kizilyalli, Hui Nie, David P. Bour |
2016-02-23 |