Issued Patents 2011
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8081504 | Computer memory device with status register | Yiran Chen, Daniel S. Reed, Hongyue Liu, Hai Li | 2011-12-20 |
| 8072014 | Polarity dependent switch for resistive sense memory | Chulmin Jung, Maroun Georges Khoury, Young-Pil Kim | 2011-12-06 |
| 8054675 | Variable write and read methods for resistive random access memory | Haiwen Xi, Hongyue Liu, Xiaobin Wang, Yiran Chen, Yuankai Zheng +3 more | 2011-11-08 |
| 8054673 | Three dimensionally stacked non volatile memory units | Xuguang Wang, Hai Li, Hongyue Liu | 2011-11-08 |
| 8053749 | Mirrored-gate cell for non-volatile memory | Roger Glenn Rolbiecki, Andrew John Carter | 2011-11-08 |
| 8050092 | NAND flash memory with integrated bit line capacitance | Chulmin Jung, Harry Hongyue Liu, Brian Lee, Dadi Setiadi | 2011-11-01 |
| 8045412 | Multi-stage parallel data transfer | Harry Hongyue Liu, Hai Li, Andrew John Carter, Daniel S. Reed | 2011-10-25 |
| 8040743 | Data storage using read-mask-write operation | Henry Huang, Hai Li | 2011-10-18 |
| 8040713 | Bit set modes for a resistive sense memory cell array | Yiran Chen, Daniel S. Reed, Harry Hongyue Liu, Hai Li, Rod V. Bowman | 2011-10-18 |
| 8009458 | Asymmetric write current compensation using gate overdrive for resistive sense memory cells | Harry Hongyue Liu | 2011-08-30 |
| 8004872 | Floating source line architecture for non-volatile memory | Chulmin Jung, Harry Hongyue Liu | 2011-08-23 |
| 7974119 | Transmission gate-based spin-transfer torque memory unit | Yiran Chen, Hai Li, Hongyue Liu, Yang Li | 2011-07-05 |
| 7965565 | Current cancellation for non-volatile memory | Chulmin Jung, Insik Jin, YoungPil Kim, Harry Hongyue Liu, Andrew John Carter | 2011-06-21 |
| 7952917 | Variable write and read methods for resistive random access memory | Haiwen Xi, Hongyue Liu, Xiaobin Wang, Yiran Chen, Yuankai Zheng +3 more | 2011-05-31 |
| 7944731 | Resistive sense memory array with partial block update capability | Yiran Chen, Daniel S. Reed, Harry Hongyue Liu, Hai Li | 2011-05-17 |
| 7944729 | Simultaneously writing multiple addressable blocks of user data to a resistive sense memory cell array | Yiran Chen, Daniel S. Reed, Harry Hongyue Liu, Hai Li, Rod V. Bowman | 2011-05-17 |
| 7936592 | Non-volatile memory cell with precessional switching | Xiaobin Wang, Haiwen Xi, Yuankai Zheng, Yiran Chen, Harry Hongyue Liu +3 more | 2011-05-03 |
| 7936588 | Memory array with read reference voltage cells | Hongyue Liu, Andrew John Carter, Yiran Chen, Hai Li | 2011-05-03 |
| 7936580 | MRAM diode array and access method | Yiran Chen, Hai Li, Hongyue Liu, Song S. Xue | 2011-05-03 |
| 7936629 | Table-based reference voltage characterization scheme | Henry Huang, Andrew John Carter, Maroun Georges Khoury, Yiran Chen | 2011-05-03 |
| 7935619 | Polarity dependent switch for resistive sense memory | Chulmin Jung, Maroun Georges Khoury, Young-Pil Kim | 2011-05-03 |
| 7933136 | Non-volatile memory cell with multiple resistive sense elements sharing a common switching device | Andrew John Carter, Maroun Georges Khoury, Roger Glenn Rolbiecki | 2011-04-26 |
| 7885097 | Non-volatile memory array with resistive sense element block erase and uni-directional write | Daniel S. Reed, Andrew John Carter, Hai Li | 2011-02-08 |
| 7881095 | Asymmetric write current compensation using gate overdrive for resistive sense memory cells | Harry Hongyue Liu | 2011-02-01 |
| 7881104 | Magnetic memory with separate read and write paths | Hongyue Liu, Zheng Gao, Insik Jin, Dimitar V. Dimitrov | 2011-02-01 |