Issued Patents 2011
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8069492 | Spin-torque probe microscope | Haiwen Xi | 2011-11-29 |
| 8059450 | Write verify method for resistive random access memory | Haiwen Xi | 2011-11-15 |
| 8043732 | Memory cell with radial barrier | Paul E. Anderson | 2011-10-25 |
| 8004874 | Multi-terminal resistance device | Haiwen Xi, Kaizhong Gao | 2011-08-23 |
| 7999336 | ST-RAM magnetic element configurations to reduce switching current | Dexin Wang, Dimitar V. Dimitrov, Insik Jin | 2011-08-16 |
| 8000128 | Structures for resistive random access memory cells | Shaoping Li, Insik Jin, Zheng Gao, Eileen Yan, Kaizhong Gao +1 more | 2011-08-16 |
| 7977722 | Non-volatile memory with programmable capacitance | Xuguang Wang, Shuiyuan Huang, Dimitar V. Dimitrov, Michael Xuefei Tang | 2011-07-12 |
| 7961503 | Magnetic floating gate memory | Insik Jin, Yang Li, Hongyue Liu | 2011-06-14 |
| 7948045 | Magnet-assisted transistor devices | Yang Li, Insik Jin, Harry Hongyue Liu, Shuiyuan Huang, Michael Xuefei Tang | 2011-05-24 |
| 7944009 | Magnetoresistive device having specular sidewall layers | Paul E. Anderson, Michael C. Kautzky, Xuefei Tang, Patrick J. Ryan | 2011-05-17 |
| 7940592 | Spin-torque bit cell with unpinned reference layer and unidirectional write current | Daniel S. Reed, Yon Lu, Dimitar V. Dimitrov, Paul E. Anderson | 2011-05-10 |
| 7936580 | MRAM diode array and access method | Yiran Chen, Hai Li, Hongyue Liu, Yong Lu | 2011-05-03 |
| 7929259 | Magnetic sensing device including a sense enhancing layer | Zheng Gao, Brian William Karr, Eric L. Granstrom, Khuong T. Tran, Yi Li | 2011-04-19 |
| 7929258 | Magnetic sensor including a free layer having perpendicular to the plane anisotropy | Zheng Gao, Shaoping Li, Kaizhong Gao, Dimitar V. Dimitrov, Konstantin Nikolaev +1 more | 2011-04-19 |
| 7880209 | MRAM cells including coupled free ferromagnetic layers for stabilization | Haiwen Xi, Kaizhong Gao, Dimitar V. Dimitrov | 2011-02-01 |
| 7881098 | Memory with separate read and write paths | Haiwen Xi, Hongyue Liu, Michael Xuefei Tang, Antoine Khoueir | 2011-02-01 |
| 7875923 | Band engineered high-K tunnel oxides for non-volatile memory | Wei Tian, Insik Jin, Dimitar V. Dimitrov | 2011-01-25 |
| 7872323 | Magnetoresistive device having specular sidewall layers | Paul E. Anderson, Michael C. Kautzky, Xuefei Tang, Patrick J. Ryan | 2011-01-18 |