Issued Patents 2011
Showing 1–25 of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8081504 | Computer memory device with status register | Daniel S. Reed, Yong Lu, Hongyue Liu, Hai Li | 2011-12-20 |
| 8077503 | Electronic devices utilizing spin torque transfer to flip magnetic orientation | Dimitar V. Dimitrov, Olle Gunnar Heinonen, Haiwen Xi, Xiaohua Lou | 2011-12-13 |
| 8077502 | Electronic devices utilizing spin torque transfer to flip magnetic orientation | Dimitar V. Dimitrov, Olle Gunnar Heinonen, Haiwen Xi, Xiaohua Lou | 2011-12-13 |
| 8068359 | Static source plane in stram | Hai Li, Hongyue Liu, Xuguang Wang | 2011-11-29 |
| 8059453 | Magnetic tunnel junction and memristor apparatus | Xiaobin Wang, Alan Xuguang Wang, Haiwen Xi, Wenzhong Zhu, Hai Li +1 more | 2011-11-15 |
| 8054675 | Variable write and read methods for resistive random access memory | Haiwen Xi, Hongyue Liu, Xiaobin Wang, Yong Lu, Yuankai Zheng +3 more | 2011-11-08 |
| 8050072 | Dual stage sensing for non-volatile memory | Hai Li, Yuan-Yong Yan, Brian Lee, Ran Wang | 2011-11-01 |
| 8045370 | Memory self-reference read and write assist methods | Wenzhong Zhu, Dimitar V. Dimitrov, Xiaobin Wang | 2011-10-25 |
| 8040713 | Bit set modes for a resistive sense memory cell array | Daniel S. Reed, Yong Lu, Harry Hongyue Liu, Hai Li, Rod V. Bowman | 2011-10-18 |
| 8009457 | Write current compensation using word line boosting circuitry | Hai Li, Harry Hongyue Liu, Henry Huang, Ran Wang | 2011-08-30 |
| 7974119 | Transmission gate-based spin-transfer torque memory unit | Hai Li, Hongyue Liu, Yong Lu, Yang Li | 2011-07-05 |
| 7974121 | Write current compensation using word line boosting circuitry | Hai Li, Harry Hongyue Liu, Henry Huang, Ran Wang | 2011-07-05 |
| 7966581 | Generic non-volatile service layer | Dadi Setiadi, Hai Li, Haiwen Xi, Hongyue Liu | 2011-06-21 |
| 7961509 | Spin-transfer torque memory self-reference read and write assist methods | Wenzhong Zhu, Xiaobin Wang, Zheng Gao, Haiwen Xi, Dimitar V. Dimitrov | 2011-06-14 |
| 7952917 | Variable write and read methods for resistive random access memory | Haiwen Xi, Hongyue Liu, Xiaobin Wang, Yong Lu, Yuankai Zheng +3 more | 2011-05-31 |
| 7944730 | Write method with voltage line tuning | Hai Li, Wengzhong Zhu, Xiaobin Wang, Ran Wang, Hongyue Liu | 2011-05-17 |
| 7944729 | Simultaneously writing multiple addressable blocks of user data to a resistive sense memory cell array | Daniel S. Reed, Yong Lu, Harry Hongyue Liu, Hai Li, Rod V. Bowman | 2011-05-17 |
| 7944731 | Resistive sense memory array with partial block update capability | Daniel S. Reed, Yong Lu, Harry Hongyue Liu, Hai Li | 2011-05-17 |
| 7944742 | Diode assisted switching spin-transfer torque memory unit | Xuguang Wang, Dimitar V. Dimitrov, Hongyue Liu, Xiaobin Wang | 2011-05-17 |
| 7936580 | MRAM diode array and access method | Hai Li, Hongyue Liu, Yong Lu, Song S. Xue | 2011-05-03 |
| 7936629 | Table-based reference voltage characterization scheme | Henry Huang, Andrew John Carter, Maroun Georges Khoury, Yong Lu | 2011-05-03 |
| 7936625 | Pipeline sensing using voltage storage elements to read non-volatile memory cells | Hai Li, Harry Hongyue Liu, KangYong Kim, Henry Huang | 2011-05-03 |
| 7936622 | Defective bit scheme for multi-layer integrated memory device | Hai Li, Dadi Setiadi, Harry Hongyue Liu, Brian Lee | 2011-05-03 |
| 7936592 | Non-volatile memory cell with precessional switching | Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Harry Hongyue Liu +3 more | 2011-05-03 |
| 7936588 | Memory array with read reference voltage cells | Hongyue Liu, Yong Lu, Andrew John Carter, Hai Li | 2011-05-03 |