Issued Patents 2011
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8058646 | Programmable resistive memory cell with oxide layer | Ming Sun, Michael Xuefei Tang, Venkatram Venkatasamy, Philip G. Pitcher, Nurul Amin | 2011-11-15 |
| 8053244 | Magnetic oscillator based biosensor | Pat J. Ryan, Haiwen Xi | 2011-11-08 |
| 8022547 | Non-volatile memory cells including small volume electrical contact regions | Venugopalan Vaithyanathan, Wei Tian | 2011-09-20 |
| 8000128 | Structures for resistive random access memory cells | Shaoping Li, Zheng Gao, Eileen Yan, Kaizhong Gao, Haiwen Xi +1 more | 2011-08-16 |
| 7999336 | ST-RAM magnetic element configurations to reduce switching current | Dexin Wang, Dimitar V. Dimitrov, Song S. Xue | 2011-08-16 |
| 7965565 | Current cancellation for non-volatile memory | Chulmin Jung, YoungPil Kim, Yong Lu, Harry Hongyue Liu, Andrew John Carter | 2011-06-21 |
| 7961503 | Magnetic floating gate memory | Yang Li, Hongyue Liu, Song S. Xue | 2011-06-14 |
| 7948045 | Magnet-assisted transistor devices | Yang Li, Harry Hongyue Liu, Song S. Xue, Shuiyuan Huang, Michael Xuefei Tang | 2011-05-24 |
| 7939188 | Magnetic stack design | Haiwen Xi, Antoine Khoueir, Brian Lee, Pat J. Ryan, Michael Xuefei Tang +1 more | 2011-05-10 |
| 7936585 | Non-volatile memory cell with non-ohmic selection layer | Wei Tian, Venugopalan Vaithyanathan, Haiwen Xi, Michael Xuefei Tang, Brian Lee | 2011-05-03 |
| 7911833 | Anti-parallel diode structure and method of fabrication | Nurul Amin, Venugopalan Vaithyanathan, Wei Tian, YoungPil Kim | 2011-03-22 |
| 7897955 | Programmable resistive memory cell with filament placement structure | Christina Hutchinson, Richard Larson, Lance E. Stover, Jaewoo Nam, Andrew David Habermas | 2011-03-01 |
| 7881104 | Magnetic memory with separate read and write paths | Yong Lu, Hongyue Liu, Zheng Gao, Dimitar V. Dimitrov | 2011-02-01 |
| 7875923 | Band engineered high-K tunnel oxides for non-volatile memory | Wei Tian, Dimitar V. Dimitrov, Song S. Xue | 2011-01-25 |