Issued Patents 2011
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8072791 | Method of making nonvolatile memory device containing carbon or nitrogen doped diode | S. Brad Herner, Mark Clark | 2011-12-06 |
| 8062918 | Surface treatment to improve resistive-switching characteristics | Michael Miller, Prashant B. Phatak, Tony P. Chiang, Xiying Chen, April D. Schricker | 2011-11-22 |
| 8048474 | Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing | Er-Xuan Ping, Alper Ilkbahar | 2011-11-01 |
| 8023310 | Nonvolatile memory cell including carbon storage element formed on a silicide layer | Chu-Chen Fu, Er-Xuan Ping, Huiwan Xu | 2011-09-20 |
| 8008700 | Non-volatile memory cell with embedded antifuse | S. Brad Herner | 2011-08-30 |
| 7982273 | Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure | Yung-Tin Chen, Christopher J. Petti, Steven J. Radigan | 2011-07-19 |
| 7978496 | Method of programming a nonvolatile memory device containing a carbon storage material | Xiying Chen | 2011-07-12 |
| 7969011 | MIIM diodes having stacked structure | Deepak C. Sekar, Peter Rabkin, Er-Xuan Ping, Xiying Chen | 2011-06-28 |
| 7944728 | Programming a memory cell with a diode in series by applying reverse bias | Yibo Nian, Roy E. Scheuerlein | 2011-05-17 |
| 7915164 | Method for forming doped polysilicon via connecting polysilicon layers | Michael Konevecki, Usha Raghuram, Maitreyee Mahajani, Sucheta Nallamothu, Andrew J. Walker | 2011-03-29 |
| 7915163 | Method for forming doped polysilicon via connecting polysilicon layers | Michael Konevecki, Usha Raghuram, Maitreyee Mahajani, Sucheta Nallamothu, Andrew J. Walker | 2011-03-29 |
| 7915094 | Method of making a diode read/write memory cell in a programmed state | S. Brad Herner | 2011-03-29 |
| 7897453 | Dual insulating layer diode with asymmetric interface state and method of fabrication | Xiying Chen, Deepak C. Sekar, Mark Clark, Dat Nguyen | 2011-03-01 |
| 7875871 | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride | S. Brad Herner | 2011-01-25 |