Issued Patents 2011
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8003486 | Method of making a semiconductor device having a strained semiconductor active region using edge relaxation, a buried stressor layer and a sacrificial stressor layer | R. Stockton Gaines, Daniel J. Connelly | 2011-08-23 |
| 7977147 | Strained silicon with elastic edge relaxation | — | 2011-07-12 |
| 7972916 | Method of forming a field effect transistors with a sacrificial stressor layer and strained source and drain regions formed in recesses | Daniel J. Connelly, R. Stockton Gaines | 2011-07-05 |
| 7902029 | Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor | Daniel E. Grupp, Daniel J. Connelly, Carl M. Faulkner | 2011-03-08 |