Issued Patents 2011
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8003486 | Method of making a semiconductor device having a strained semiconductor active region using edge relaxation, a buried stressor layer and a sacrificial stressor layer | Daniel J. Connelly, Paul A. Clifton | 2011-08-23 |
| 7972916 | Method of forming a field effect transistors with a sacrificial stressor layer and strained source and drain regions formed in recesses | Daniel J. Connelly, Paul A. Clifton | 2011-07-05 |