TL

Tyler Lowrey

OV Ovonyx: 12 patents #1 of 30Top 4%
Micron: 6 patents #97 of 861Top 15%
IN Intel: 1 patents #771 of 2,371Top 35%
📍 West Augusta, VA: #1 of 1 inventorsTop 100%
🗺 Virginia: #1 of 1,679 inventorsTop 1%
Overall (2005): #164 of 245,428Top 1%
19
Patents 2005

Issued Patents 2005

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
6969866 Electrically programmable memory element with improved contacts Stanford R. Ovshinsky, Guy Wicker, Patrick Klersy, Boil Pashmakov, Wolodymyr Czubatyj +1 more 2005-11-29
6961258 Pore structure for programmable device 2005-11-01
6953743 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer Gurtej S. Sandhu, Trung T. Doan 2005-10-11
6943365 Electrically programmable memory element with reduced area of contact and method for making same Stephen J. Hudgens, Patrick Klersy 2005-09-13
6927093 Method for making programmable resistance memory element Patrick Klersy, Stephen J. Hudgens, Jon Maimon 2005-08-09
6919578 Utilizing atomic layer deposition for programmable device Charles H. Dennison 2005-07-19
6917052 Modified contact for programmable devices Stephen J. Hudgens 2005-07-12
6914255 Phase change access device for memories 2005-07-05
6914310 Semiconductor isolator system Trung T. Doan 2005-07-05
6914801 Method of eliminating drift in phase-change memory Sergey Kostylev, Wolodymyr Czubatyj 2005-07-05
6912146 Using an MOS select gate for a phase change memory Manzur Gill 2005-06-28
6908812 Phase change material memory device 2005-06-21
6903401 Semiconductor devices with conductive lines that are laterally offset relative to corresponding contacts 2005-06-07
6903010 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer Gurtej S. Sandhu, Trung T. Doan 2005-06-07
6881667 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer Gurtej S. Sandhu, Trung T. Doan 2005-04-19
6878618 Compositionally modified resistive electrode Daniel Xu, Chien-Chih Chiang, Patrick J. Neschleba 2005-04-12
6869883 Forming phase change memories Chien-Chih Chiang, Charles H. Dennison 2005-03-22
6861351 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer Gurtej S. Sandhu, Trung T. Doan 2005-03-01
6841397 Method for forming pore structure for programmable device 2005-01-11