Issued Patents 2005
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6933553 | Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor | Kwang Yong Kang, Doo Hyeb Youn, Byung-Gyu Chae | 2005-08-23 |