Issued Patents 2005
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6933553 | Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor | Hyun-Tak Kim, Kwang Yong Kang, Byung-Gyu Chae | 2005-08-23 |
| 6864510 | Nitride semiconductor field effect transistor (FET) and method of fabricating the same | Kyu-Seok Lee | 2005-03-08 |