BC

Byung-Gyu Chae

KAIST: 1 patents #90 of 459Top 20%
Overall (2005): #228,389 of 245,428Top 95%
1
Patents 2005

Issued Patents 2005

Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
6933553 Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor Hyun-Tak Kim, Kwang Yong Kang, Doo Hyeb Youn 2005-08-23