Issued Patents 2005
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6979619 | Flash memory device and a method of fabrication thereof | Hao Fang, Mark S. Chang, Kent Kuohua Chang | 2005-12-27 |
| 6963506 | Circuit and technique for accurately sensing low voltage flash memory devices | Zhigang Wang, Nian Yang | 2005-11-08 |
| 6963106 | Memory array with memory cells having reduced short channel effects | Richard Fastow, Kazuhiro Mizutani, Timothy Thurgate | 2005-11-08 |
| 6953752 | Reduced silicon gouging and common source line resistance in semiconductor devices | Sameer Haddad, Zhi-Gang Wang, Richard Fastow | 2005-10-11 |
| 6939766 | Method for fabricating a flash memory device | Richard Fastow, Jianshi Wang | 2005-09-06 |
| 6939770 | Method of fabricating semiconductor device having triple LDD structure and lower gate resistance formed with a single implant process | Imran Khan, Jianshi Wang, Jun-Kyu Kang | 2005-09-06 |
| 6898124 | Efficient and accurate sensing circuit and technique for low voltage flash memory devices | Zhigang Wang, Nian Yang | 2005-05-24 |
| 6888157 | N-Gate/N-Substrate or P-Gate/P-Substrate capacitor to characterize polysilicon gate depletion evaluation | Zhigang Wang, Nian Yang | 2005-05-03 |
| 6878589 | Method and system for improving short channel effect on a floating gate device | Richard Fastow, Xin Guo | 2005-04-12 |
| 6867119 | Nitrogen oxidation to reduce encroachment | Richard Fastow, Zhi-Gang Wang | 2005-03-15 |
| 6852594 | Two-step source side implant for improving source resistance and short channel effect in deep sub-0.18μm flash memory technology | Zhigang Wang, Richard Fastow | 2005-02-08 |