WN

Wesley C. Natzle

IBM: 3 patents #575 of 5,464Top 15%
📍 New Paltz, NY: #3 of 12 inventorsTop 25%
🗺 New York: #810 of 9,035 inventorsTop 9%
Overall (2004): #18,352 of 270,089Top 7%
3
Patents 2004

Issued Patents 2004

Showing 1–3 of 3 patents

Patent #TitleCo-InventorsDate
6835614 Damascene double-gate MOSFET with vertical channel regions Hussein I. Hanafi, Jeffrey J. Brown 2004-12-28
6790733 Preserving TEOS hard mask using COR for raised source-drain including removable/disposable spacer Bruce B. Doris, Sadanand V. Deshpande, Renee T. Mo, Patricia A. O'Neil 2004-09-14
6774000 Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures Marc W. Cantell, Louis D. Lanzerotti, Effendi Leobandung, Brian L. Tessier, Ryan Wuthrich 2004-08-10