Issued Patents 2004
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6815802 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2004-11-09 |
| 6812545 | Epitaxial base bipolar transistor with raised extrinsic base | James S. Dunn, David L. Harame, Jeffrey B. Johnson, Robb Johnson, Stephen A. St. Onge | 2004-11-02 |
| 6774000 | Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures | Wesley C. Natzle, Marc W. Cantell, Effendi Leobandung, Brian L. Tessier, Ryan Wuthrich | 2004-08-10 |
| 6767793 | Strained fin FETs structure and method | William F. Clark, Jr., David M. Fried, Edward J. Nowak | 2004-07-27 |