DB

Diane C. Boyd

IBM: 2 patents #1,011 of 5,539Top 20%
📍 Lagrangeville, NY: #6 of 31 inventorsTop 20%
🗺 New York: #1,452 of 9,423 inventorsTop 20%
Overall (2003): #69,991 of 273,478Top 30%
2
Patents 2003

Issued Patents 2003

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
6660598 Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region Hussein I. Hanafi, Kevin K. Chan, Wesley C. Natzle, Leathen Shi 2003-12-09
6593617 Field effect transistors with vertical gate side walls and method for making such transistors Stuart M. Burns, Hussein I. Hanafi, Yuan Taur, William C. Wille 2003-07-15