Issued Patents 1997
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5691228 | Semiconductor processing method of making a hemispherical grain (HSG) polysilicon layer | Er-Xang Ping | 1997-11-25 |
| 5686748 | Dielectric material and process to create same | Gurtej S. Sandhu | 1997-11-11 |
| 5672539 | Method for forming an improved field isolation structure using ozone enhanced oxidation and tapering | J. Brett Rolfson, Fernando Gonzalez, John T. Moore | 1997-09-30 |
| 5663090 | Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMs | Charles H. Dennison | 1997-09-02 |
| 5658381 | Method to form hemispherical grain (HSG) silicon by implant seeding followed by vacuum anneal | Michael Nuttall | 1997-08-19 |
| 5656531 | Method to form hemi-spherical grain (HSG) silicon from amorphous silicon | Lyle Breiner | 1997-08-12 |
| 5654904 | Control and 3-dimensional simulation model of temperature variations in a rapid thermal processing machine | — | 1997-08-05 |
| 5652181 | Thermal process for forming high value resistors | — | 1997-07-29 |
| 5646075 | Method for optimizing thermal budgets in fabricating semiconductors | Fernando Gonzalez | 1997-07-08 |
| 5639685 | Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon | John K. Zahurak, Klaus Schuegraf | 1997-06-17 |
| 5634974 | Method for forming hemispherical grained silicon | Ronald A. Weimer, Avishai Kepten, Michael Sendler | 1997-06-03 |
| 5629223 | Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal | — | 1997-05-13 |
| 5624865 | High pressure reoxidation anneal of silicon nitride for reduced thermal budget silicon processing | Klaus Schuegraf, Pierre C. Fazan | 1997-04-29 |
| 5618461 | Reflectance method for accurate process calibration in semiconductor wafer heat treatment | Robert Burke, Russell C. Zahorik, Paul A. Paduano | 1997-04-08 |