Issued Patents 1997
Showing 1–5 of 5 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5648281 | Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate | Richard K. Williams, Michael E. Cornell, Jun-Wei Chen | 1997-07-15 |
| 5643820 | Method for fabricating an MOS capacitor using zener diode region | Richard K. Williams, Michael E. Cornell, Jun-Wei Chen | 1997-07-01 |
| 5618743 | MOS transistor having adjusted threshold voltage formed along with other transistors | Richard K. Williams, Michael E. Cornell, Jun-Wei Chen | 1997-04-08 |
| 5614751 | Edge termination structure for power MOSFET | Fwu-Iuan Hshieh | 1997-03-25 |
| 5597765 | Method for making termination structure for power MOSFET | Fwu-Iuan Hshieh | 1997-01-28 |