Issued Patents 1997
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5689128 | High density trenched DMOS transistor | Mike F. Chang, Kuo-In Chen, Richard K. Williams, Mohamed N. Darwish | 1997-11-18 |
| 5668026 | DMOS fabrication process implemented with reduced number of masks | True-Lon Lin, Danny Chi Nim, Koon Chong So, Yan Man Tsui | 1997-09-16 |
| 5639676 | Trenched DMOS transistor fabrication having thick termination region oxide | Mike F. Chang, Yueh-Se Ho, King Owyang | 1997-06-17 |
| 5629543 | Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness | Mike F. Chang, Lih-Ying Ching, Sze Him Ng, William H. Cook | 1997-05-13 |
| 5614751 | Edge termination structure for power MOSFET | Hamza Yilmaz | 1997-03-25 |
| 5597765 | Method for making termination structure for power MOSFET | Hamza Yilmaz | 1997-01-28 |
| 5592005 | Punch-through field effect transistor | Brian H. Floyd, Mike F. Chang | 1997-01-07 |