Issued Patents 1997
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5648281 | Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate | Richard K. Williams, Hamza Yilmaz, Jun-Wei Chen | 1997-07-15 |
| 5648288 | Threshold adjustment in field effect semiconductor devices | Richard K. Williams | 1997-07-15 |
| 5643820 | Method for fabricating an MOS capacitor using zener diode region | Richard K. Williams, Hamza Yilmaz, Jun-Wei Chen | 1997-07-01 |
| 5618743 | MOS transistor having adjusted threshold voltage formed along with other transistors | Richard K. Williams, Hamza Yilmaz, Jun-Wei Chen | 1997-04-08 |