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Vertical gate LDMOS device |
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Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
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| 6699765 |
Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
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2001-12-11 |
| 6020246 |
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2000-02-01 |
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Electrically programmable and erasable memory cell |
Giora Yaron, Ying K. Shum, Ury Priel, Mark S. Ebel |
1984-10-16 |