| 5745990 |
Titanium boride and titanium silicide contact barrier formation for integrated circuits |
Chang-Ou Lee, Landon B. Vines, Felix Fujishiro |
1998-05-05 |
| 5610105 |
Densification in an intermetal dielectric film |
Landon B. Vines, John L. Cain, Chang-Ou Lee, Felix Fujishiro |
1997-03-11 |
| 5434104 |
Method of using corrosion prohibiters in aluminum alloy films |
John L. Cain, Landon B. Vines, Chang-Ou Lee, Felix Fujishiro |
1995-07-18 |
| 5329161 |
Molybdenum boride barrier layers between aluminum and silicon at contact points in semiconductor devices |
Landon B. Vines, John L. Cain, Chang-Ou Lee, Felix Fujishiro |
1994-07-12 |
| 5286518 |
Integrated-circuit processing with progressive intermetal-dielectric deposition |
John L. Cain, Felix Fujishiro, Chang-Ou Lee, Landon B. Vines |
1994-02-15 |