CL

Chih-Yuan Lu

VS Vanguard International Semiconductor: 25 patents #17 of 585Top 3%
IT ITRI: 18 patents #144 of 9,619Top 2%
MC Macronix International Co.: 12 patents #156 of 1,241Top 15%
AT AT&T: 8 patents #2,286 of 18,772Top 15%
CI Corning Incorporated: 5 patents #983 of 3,867Top 30%
AL American Telephone And Telegraph Company, At&T Bell Laboratories: 2 patents #123 of 1,086Top 15%
CC Cheng Uei Precision Industry Co.: 1 patents #297 of 502Top 60%
AT American Telephone And Telegraph: 1 patents #132 of 699Top 20%
📍 Emmaus, PA: #5 of 365 inventorsTop 2%
🗺 Pennsylvania: #313 of 74,527 inventorsTop 1%
Overall (All Time): #27,881 of 4,157,543Top 1%
72
Patents All Time

Issued Patents All Time

Showing 26–50 of 72 patents

Patent #TitleCo-InventorsDate
6057573 Design for high density memory with relaxed metal pitch Howard C. Kirsch 2000-05-02
5976945 Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor Min-hwa Chi 1999-11-02
5943581 Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits Janmye Sung 1999-08-24
5933725 Word line resistance reduction method and design for high density memory with relaxed metal pitch Howard C. Kirsch 1999-08-03
5930661 Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers — 1999-07-27
5843820 Method of fabricating a new dynamic random access memory (DRAM) cell having a buried horizontal trench capacitor — 1998-12-01
5827394 Step and repeat exposure method for loosening integrated circuit dice from a radiation sensitive adhesive tape backing — 1998-10-27
5821142 Method for forming a capacitor with a multiple pillar structure Janmye Sung, Howard C. Kirsch 1998-10-13
5804480 method for forming a DRAM capacitor using HSG-Si technique and oxygen implant Horng-Huei Tseng 1998-09-08
5792680 Method of forming a low cost DRAM cell with self aligned twin tub CMOS devices and a pillar shaped capacitor Janmye Sung, Howard C. Kirsch 1998-08-11
5789316 Self-aligned method for forming a narrow via — 1998-08-04
5759894 Method for forming a DRAM capacitor using HSG-Si Horng-Huei Tseng 1998-06-02
5679596 Spot deposited polysilicon for the fabrication of high capacitance, DRAM devices — 1997-10-21
5679589 FET with gate spacer Kuo-Hua Lee, Janmye Sung 1997-10-21
5663093 Method for forming a cylindrical capacitor having a central spine Horng-Huei Tseng 1997-09-02
5652165 Method of forming a stacked capacitor with a double wall crown shape Horng-Huei Tseng 1997-07-29
5631480 DRAM stack capacitor with ladder storage node Horng-Huei Tseng 1997-05-20
5595928 High density dynamic random access memory cell structure having a polysilicon pillar capacitor Horng-Huei Tseng 1997-01-21
5594682 High density self-aligned stack in trench DRAM technology Horng-Huei Tseng 1997-01-14
5552620 Vertical transistor with high density DRAM cell and method of making Horng-Huei Tseng 1996-09-03
5550077 DRAM cell with a comb-type capacitor Horng-Huei Tseng 1996-08-27
5534457 "Method of forming a stacked capacitor with an ""I"" shaped storage node" Horng-Huei Tseng 1996-07-09
5534460 Optimized contact plug process Horng-Huei Tseng 1996-07-09
5519238 Rippled polysilicon surface capacitor electrode plate for high density dram — 1996-05-21
5451537 Method of forming a DRAM stack capacitor with ladder storage node Horng-Huei Tseng 1995-09-19