Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6222210 | Complementary heterostructure integrated single metal transistor apparatus | Charles L. A. Cerny, Christopher A. Bozada, Gregory C. DeSalvo, John L. Ebel, Ross W. Dettmer +7 more | 2001-04-24 |
| 6198116 | Complementary heterostructure integrated single metal transistor fabrication method | Charles L. A. Cerny, Christopher A. Bozada, Gregory C. DeSalvo, John L. Ebel, Ross W. Dettmer +7 more | 2001-03-06 |
| 6066865 | Single layer integrated metal enhancement mode field-effect transistor apparatus | Charles L. A. Cerny, Christopher A. Bozada, Gregory C. DeSalvo, John L. Ebel, Ross W. Dettmer +7 more | 2000-05-23 |
| 6020226 | Single layer integrated metal process for enhancement mode field-effect transistor | Charles L. A. Cerny, Christopher A. Bozada, Gregory C. DeSalvo, John L. Ebel, Ross W. Dettmer +7 more | 2000-02-01 |
| 6004881 | Digital wet etching of semiconductor materials | Christopher A. Bozada, Gregory C. DeSalvo, John L. Ebel, Charles L. A. Cerny, Ross W. Dettmer +7 more | 1999-12-21 |
| 5976920 | Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) | Kenichi Nakano, Christopher A. Bozada, Tony K. Quach, Gregory C. DeSalvo, G. David Via +4 more | 1999-11-02 |
| 5940694 | Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops | Christopher A. Bozada, Tony K. Quach, Kenichi Nakano, Gregory C. DeSalvo, G. David Via +4 more | 1999-08-17 |
| 5869364 | Single layer integrated metal process for metal semiconductor field effect transistor (MESFET) | Kenichi Nakano, Christopher A. Bozada, Tony K. Quach, Gregory C. DeSalvo, G. David Via +4 more | 1999-02-09 |
| 5796131 | Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal | Kenichi Nakano, Christopher A. Bozada, Tony K. Quach, Gregory C. DeSalvo, G. David Via +4 more | 1998-08-18 |
| 5698900 | Field effect transistor device with single layer integrated metal and retained semiconductor masking | Christopher A. Bozada, Tony K. Quach, Kenichi Nakano, Gregory C. DeSalvo, G. David Via +4 more | 1997-12-16 |
| 5698870 | High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal | Kenichi Nakano, Christopher A. Bozada, Tony K. Quach, Gregory C. DeSalvo, G. David Via +4 more | 1997-12-16 |
| 5594262 | Elevated temperature gallium arsenide field effect transistor with aluminum arsenide to aluminum gallium arsenide mole fractioned buffer layer | Hyong-yong Lee, Belinda Johnson, Rocky Reston, Chris Ito, Gerald Trombley | 1997-01-14 |
| 5411902 | Process for improving gallium arsenide field effect transistor performance using an aluminum arsenide or an aluminum gallium arsenide buffer layer | Hyong-yong Lee, Belinda Johnson, Rocky Reston, Chris Ito, Gerald Trombley | 1995-05-02 |