| 11271122 |
Short wavelength infrared optoelectronic devices having a dilute nitride layer |
Sabeur Siala, Aymeric MAROS, Ting Liu, Ferran Suarez, Evan Pickett |
2022-03-08 |
| 10930808 |
Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells |
Ferran Suarez, Ting Liu, ARSEN SUKIASYAN, Ivan Hernandez, JORDAN LANG +2 more |
2021-02-23 |
| 9496132 |
Nucleation of III-N on REO templates |
Erdem Arkun, Andrew Clark, Rytis Dargis, Michael S. Lebby |
2016-11-15 |
| 9443939 |
Strain compensated REO buffer for III-N on silicon |
Rytis Dargis, Erdem Arkun, Andrew Clark, Michael S. Lebby |
2016-09-13 |
| 8889978 |
III-V semiconductor interface with graded GeSn on silicon |
Michael S. Lebby, Scott Semans |
2014-11-18 |
| 8846504 |
GaN on Si(100) substrate using epi-twist |
Rytis Dargis, Andrew Clark, Erdem Arkun |
2014-09-30 |
| 8803194 |
Zirconium and hafnium boride alloy templates on silicon for nitride integration applications |
John Kouvetakis |
2014-08-12 |
| 8679953 |
Crystalline REO template on silicon substrate |
Andrew Clark, Erdem Arkun |
2014-03-25 |
| 8545627 |
Zirconium and hafnium boride alloy templates on silicon for nitride integration applications |
John Kouvetakis |
2013-10-01 |
| 8029905 |
GeSiSn-based compounds, templates, and semiconductor structures |
John Kouvetakis |
2011-10-04 |
| 7781356 |
Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer |
John Kouvetakis, Ignatius S. T. Tsong, John Tolle |
2010-08-24 |
| 6911084 |
Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
John Kouvetakis, Ignatius S. T. Tsong, John Tolle |
2005-06-28 |