Issued Patents All Time
Showing 51–75 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7125753 | Self-aligned thin capacitively-coupled thyristor structure | Scott Robins, Farid Nemati | 2006-10-24 |
| 7123508 | Reference cells for TCCT based memory cells | Tapan Samaddar | 2006-10-17 |
| 7064977 | Reference cells for TCCT based memory cells | Tapan Samaddar, Scott Robins | 2006-06-20 |
| 7053423 | Thyristor having a first emitter with relatively lightly doped portion to the base | Farid Nemati, Scott Robins | 2006-05-30 |
| 7049182 | Shunt connection to the emitter of a thyristor | Scott Robins | 2006-05-23 |
| 7037763 | Gated-thyristor approach having angle-implanted base region | Farid Nemati, Scott Robins | 2006-05-02 |
| 7030425 | Buried emitter contact for thyristor-based semiconductor device | Scott Robins | 2006-04-18 |
| 7015077 | Varied trench depth for thyristor isolation | Scott Robins | 2006-03-21 |
| 6998298 | Thyristor semiconductor memory device and method of manufacture | — | 2006-02-14 |
| 6998652 | Trench isolation for thyristor-based device | Scott Robins | 2006-02-14 |
| 6980457 | Thyristor-based device having a reduced-resistance contact to a buried emitter region | Scott Robins | 2005-12-27 |
| 6979602 | Method for making a recessed thyristor control port | Scott Robins | 2005-12-27 |
| 6965129 | Thyristor-based device having dual control ports | Scott Robins, Farid Nemati | 2005-11-15 |
| 6953953 | Deep trench isolation for thyristor-based semiconductor device | — | 2005-10-11 |
| 6940772 | Reference cells for TCCT based memory cells | Tapan Samaddar, Scott Robins | 2005-09-06 |
| 6913955 | Method of manufacturing a thyristor device with a control port in a trench | Scott Robins | 2005-07-05 |
| 6911680 | Self-aligned thin capacitively-coupled thyristor structure | Scott Robins, Farid Nemati | 2005-06-28 |
| 6901021 | Reference cells for TCCT based memory cells | Tapan Samaddar, Scott Robins | 2005-05-31 |
| 6888176 | Thyrister semiconductor device | Fred N. Hause | 2005-05-03 |
| 6888177 | Increased base-emitter capacitance | Farid Nemati, Scott Robins | 2005-05-03 |
| 6872602 | Carrier coupler for thyristor-based semiconductor device | Farid Nemati, Badredin Fatemizadeh, Scott Robins | 2005-03-29 |
| 6845044 | Method of preventing high Icc at start-up in zero-power EEPROM cells for PLD applications | Michael Rowlandson | 2005-01-18 |
| 6835997 | Thyristor-based device with trench dielectric material | Scott Robins | 2004-12-28 |
| 6828202 | Semiconductor region self-aligned with ion implant shadowing | — | 2004-12-07 |
| 6828176 | Thyristor having a first emitter with relatively lightly doped portion to the base | Farid Nemati, Scott Robins | 2004-12-07 |