Issued Patents All Time
Showing 26–50 of 83 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10622550 | Magnetoresistance effect element including a recording layer with perpendicular anisotropy and a bias layer comprised of an antiferromagnetic material, magnetic memory device, manufacturing method, operation method, and integrated circuit | Shunsuke Fukami, Tetsuo Endoh | 2020-04-14 |
| 10586580 | Magnetic tunnel junction element and magnetic memory | Hiroaki Honjo, Shoji Ikeda, Hideo Sato, Tetsuo Endoh | 2020-03-10 |
| 10424725 | Spintronics element | Soshi Sato, Masaaki Niwa, Hiroaki Honjo, Shoji Ikeda, Hideo Sato +1 more | 2019-09-24 |
| 10410703 | Magnetoresistance effect element and magnetic memory device | Shunsuke Fukami, Toru IWABUCHI, Tetsuo Endoh | 2019-09-10 |
| 10396274 | Spin electronics element and method of manufacturing thereof | Soshi Sato, Masaaki Niwa, Hiroaki Honjo, Shoji Ikeda, Tetsuo Endo | 2019-08-27 |
| 10263180 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shinya Ishikawa, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura +1 more | 2019-04-16 |
| 10164174 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota WATANABE +5 more | 2018-12-25 |
| 10127957 | Control method for magnetoresistance effect element and control device for magnetoresistance effect element | Shun Kanai, Fumihiro Matsukura, Michihiko Yamanouchi, Shoji Ikeda, Hideo Sato | 2018-11-13 |
| 10037789 | Magnetic memory and method for writing data into magnetic memory element | Ryusuke Nebashi, Noboru Sakimura, Yukihide Tsuji, Ayuka Tada | 2018-07-31 |
| 10020039 | Three terminal magnetoresistive devices, magnetoresistive random access memory and magnetic recording method | Shunsuke Fukami, Michihiko Yamanouchi | 2018-07-10 |
| 9941468 | Magnetoresistance effect element and magnetic memory device | Shunsuke Fukami, Chaoling Zhang, Tetsuro Anekawa, Tetsuo Endoh | 2018-04-10 |
| 9928906 | Data-write device for resistance-change memory element | Takahiro Hanyu, Daisuke Suzuki, Masanori Natsui, Akira Mochizuki, Tetsuo Endoh | 2018-03-27 |
| 9799822 | Magnetic memory element and magnetic memory | Shunsuke Fukami, Nobuyuki Ishiwata, Tadahiko Sugibayashi, Shoji Ikeda, Michihiko Yamanouchi | 2017-10-24 |
| 9577182 | Magnetoresistance effect element and magnetic memory | Shoji Ikeda, Hideo Sato, Shunsuke Fukami, Michihiko Yamanouchi, Fumihiro Matsukura +1 more | 2017-02-21 |
| 9564152 | Magnetoresistance effect element and magnetic memory | Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Hiroyuki Yamamoto +1 more | 2017-02-07 |
| 9536584 | Nonvolatile logic gate device | Ryusuke Nebashi, Noboru Sakimura, Yukihide Tsuji, Ayuka Tada, Tadahiko Sugibayashi +2 more | 2017-01-03 |
| 9478309 | Magnetic-domain-wall-displacement memory cell and initializing method therefor | Ryusuke Nebashi, Noboru Sakimura, Tadahiko Sugibayashi, Yukihide Tsuji, Ayuka Tada +1 more | 2016-10-25 |
| 9466363 | Integrated circuit | Tetsuo Endoh, Takashi Ohsawa, Hiroki Koike, Takahiro Hanyu | 2016-10-11 |
| 9450177 | Magnetoresistive element and magnetic memory | Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura +1 more | 2016-09-20 |
| 9406869 | Semiconductor device | Hiroaki Honjou, Keizo Kinoshita | 2016-08-02 |
| 9299435 | Nonvolatile content addressable memory and method for operating same | Noboru Sakimura, Ryusuke Nebashi, Tadahiko Sugibayashi, Shoun Matsunaga, Takahiro Hanyu | 2016-03-29 |
| 9202545 | Magnetoresistance effect element and magnetic memory | Hideo Sato, Shunsuke Fukami, Michihiko Yamanouchi, Shoji Ikeda, Fumihiro Matsukura | 2015-12-01 |
| 9153306 | Tunnel magnetoresistive effect element and random access memory using same | Shoji Ikeda, Hiroyuki Yamamoto, Yosuke Kurosaki, Katsuya Miura | 2015-10-06 |
| 9135973 | Magnetoresistance effect element and magnetic memory | Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura +1 more | 2015-09-15 |
| 9070457 | Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory | Shoji Ikeda, Michihiko Yamanouchi, Hideo Sato, Katsuya Miura | 2015-06-30 |