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USPTO Patent Rankings Data through Dec 31, 2025
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Ming Yang — 14 Patents

TITexas Instruments: 8 patents #1,850 of 12,488Top 15%
UMUnited Microelectronics: 6 patents #927 of 4,560Top 25%
Overall (All Time): #332,869 of 4,157,543Top 9%
14 Patents All Time
Ming Yang has been granted 14 US patents while listed as an inventor at Texas Instruments. The first was granted in 1993 and the most recent in September 2006. Ming Yang ranks #332,869 of 4,157,543 US inventors in our database (top 8.0%). Patent records list Ming Yang in Baoshan, TX, TW.

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
7112532 Process for forming a dual damascene structure Abbas Ali 2006-09-26 $13,551,000
6930049 Endpoint control for small open area by RF source parameter Vdc Jiaming Huang 2005-08-16 $16,785,000
6803273 Method to salicide source-line in flash memory with STI Thomas M. Ambrose, Freidoon Mehrad, Lancy Tsung 2004-10-12 $15,498,000
6605540 Process for forming a dual damascene structure Abbas Ali 2003-08-12 $40,591,000
6277720 Silicon nitride dopant diffusion barrier in integrated circuits Vikram N. Doshi, Takayuki Niuya 2001-08-21 $63,861,000
6274481 Process sequence to improve DRAM data retention Jim Huang 2001-08-14 $35,416,000
5972796 In-situ barc and nitride etch process Masahiro Kaida, Tom Lassister, Fred Fishburn 1999-10-26 $27,021,000
5914279 Silicon nitride sidewall and top surface layer separating conductors Takayuki Niuya 1999-06-22 $80,437,000
5763020 Process for evenly depositing ions using a tilting and rotating platform 1998-06-09
5759282 Process for evenly depositing ions using a tilting and rotating platform 1998-06-02
5554550 Method of fabricating electrically eraseable read only memory cell having a trench 1996-09-10
5512507 Process for post metal coding of a ROM, by gate etch Gary Hong 1996-04-30
5393702 Via sidewall SOG nitridation for via filling Hong-Tsz Pan, Shih-Chanh Chang 1995-02-28
5264386 Read only memory manufacturing method 1993-11-23