Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6319799 | High mobility heterojunction transistor and method | Qiqing C. Ouyang, Sanjay Banerjee | 2001-11-20 |
| 5393690 | Method of making semiconductor having improved interlevel conductor insulation | Horng-Sen Fu, Pallab K. Chatterjee | 1995-02-28 |
| 5202574 | Semiconductor having improved interlevel conductor insulation | Horng-Sen Fu, Pallab K. Chatterjee | 1993-04-13 |
| 5026575 | Growth of polycrystalline CaF.sub.2 via low temperature OMCVD | Richard A. Jones, Alan H. Cowley | 1991-06-25 |
| 4763181 | High density non-charge-sensing DRAM cell | — | 1988-08-09 |
| 4591891 | Post-metal electron beam programmable MOS read only memory | Pallab K. Chatterjee | 1986-05-27 |
| 4553316 | Self-aligned gate method for making MESFET semiconductor | Theodore W. Houston, Henry M. Darley, Horng-Sen Fu | 1985-11-19 |
| 4455738 | Self-aligned gate method for making MESFET semiconductor | Theodore W. Houston, Henry M. Darley, Horng-Sen Fu | 1984-06-26 |
| 4384301 | High performance submicron metal-oxide-semiconductor field effect transistor device structure | Pallab K. Chatterjee, Horng-Sen Fu | 1983-05-17 |
| 4373165 | Very high density punch-through read-only-memory | — | 1983-02-08 |
| 4355454 | Coating device with As.sub.2 -O.sub.3 -SiO.sub.2 | Horng-Sen Fu | 1982-10-26 |
| 4356040 | Semiconductor device having improved interlevel conductor insulation | Horng-Sen Fu, Pallab K. Chatterjee | 1982-10-26 |
| 4354896 | Formation of submicron substrate element | William R. Hunter, Thomas C. Holloway | 1982-10-19 |
| 4328511 | Taper isolated ram cell without gate oxide | Geoff W. Taylor, Pallab K. Chatterjee | 1982-05-04 |
| 4319260 | Multilevel interconnect system for high density silicon gate field effect transistors | Horng-Sen Fu | 1982-03-09 |
| 4272303 | Method of making post-metal ion beam programmable MOS read only memory | Pallab K. Chatterjee | 1981-06-09 |
| 4268950 | Post-metal ion implant programmable MOS read only memory | Pallab K. Chatterjee | 1981-05-26 |
| 4228445 | Dual plane well-type two-phase ccd | Pallab K. Chatterjee | 1980-10-14 |
| 4227202 | Dual plane barrier-type two-phase CCD | Pallab K. Chatterjee | 1980-10-07 |
| 4203125 | Buried storage punch through dynamic ram cell | Pallab K. Chatterjee, Geoff W. Taylor, Horng-Sen Fu | 1980-05-13 |