Issued Patents All Time
Showing 151–175 of 227 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8088679 | Method for fabricating integrated circuit with gate electrode level portion including at least two complementary transistor forming linear conductive segments and at least one non-gate linear conductive segment | Michael C. Smayling | 2012-01-03 |
| 8089104 | Integrated circuit with gate electrode level region including multiple linear-shaped conductive structures forming gate electrodes of transistors and including uniformity extending portions of different size | Michael C. Smayling | 2012-01-03 |
| 8089103 | Integrated circuit device with gate level region including at least three linear-shaped conductive segments having offset line ends and forming three transistors of first type and one transistor of second type | Michael C. Smayling | 2012-01-03 |
| 8089102 | Method for fabricating integrated circuit having three or more linear-shaped gate electrode level conductive segments of both equal length and equal pitch | Michael C. Smayling | 2012-01-03 |
| 8089101 | Integrated circuit device with gate electrode level region including two side-by-side ones of at least three linear-shaped conductive structures electrically connected to each other through non-gate level | Michael C. Smayling | 2012-01-03 |
| 8089100 | Integrated circuit with gate electrode level region including at least four linear-shaped conductive structures forming gate electrodes of transistors and including extending portions of at least two different sizes | Michael C. Smayling | 2012-01-03 |
| 8089099 | Integrated circuit device and associated layout including gate electrode level region of 965 NM radius with linear-shaped conductive segments on fixed pitch | Michael C. Smayling | 2012-01-03 |
| 8089098 | Integrated circuit device and associated layout including linear gate electrodes of different transistor types next to linear-shaped non-gate conductive segment | Michael C. Smayling | 2012-01-03 |
| 8088682 | Method for fabricating integrated circuit with gate electrode level region including two side-by-side ones of at least three linear-shaped conductive structures electrically connected to each other through non-gate level | Michael C. Smayling | 2012-01-03 |
| 8088681 | Method for fabricating integrated circuit including separated diffusion regions of different type each having four gate electrodes with each of two complementary gate electrode pairs formed from respective linear condcutive segment | Michael C. Smayling | 2012-01-03 |
| 8088680 | Method for fabricating integrated circuit having at least three linear-shaped gate electrode level conductive features of equal length positioned side-by-side at equal pitch | Michael C. Smayling | 2012-01-03 |
| 8072003 | Integrated circuit device and associated layout including two pairs of co-aligned complementary gate electrodes with offset gate contact structures | Michael C. Smayling | 2011-12-06 |
| 8058691 | Semiconductor device including cross-coupled transistors formed from linear-shaped gate level features | — | 2011-11-15 |
| 8058671 | Semiconductor device having at least three linear-shaped electrode level conductive features of equal length positioned side-by-side at equal pitch | Michael C. Smayling | 2011-11-15 |
| 8035133 | Semiconductor device having two pairs of transistors of different types formed from shared linear-shaped conductive features with intervening transistors of common type on equal pitch | Michael C. Smayling | 2011-10-11 |
| 8030689 | Integrated circuit device and associated layout including separated diffusion regions of different type each having four gate electrodes with each of two complementary gate electrode pairs formed from respective linear conductive segment | Michael C. Smayling | 2011-10-04 |
| 8022441 | Semiconductor device and associated layouts having transistors formed from six linear conductive segments with gate electrode-to-gate electrode connection through single interconnect level and common node connection through different interconnect level | Michael C. Smayling | 2011-09-20 |
| 7994545 | Methods, structures, and designs for self-aligning local interconnects used in integrated circuits | Michael C. Smayling | 2011-08-09 |
| 7989847 | Semiconductor device having linear-shaped gate electrodes of different transistor types with uniformity extending portions of different lengths | Michael C. Smayling | 2011-08-02 |
| 7989848 | Semiconductor device having at least four side-by-side electrodes of equal length and equal pitch with at least two transistor connections to power or ground | Michael C. Smayling | 2011-08-02 |
| 7956421 | Cross-coupled transistor layouts in restricted gate level layout architecture | — | 2011-06-07 |
| 7952119 | Semiconductor device and associated layout having three or more linear-shaped gate electrode level conductive segments of both equal length and equal pitch | Michael C. Smayling | 2011-05-31 |
| 7948012 | Semiconductor device having 1965 nm gate electrode level region including at least four active linear conductive segments and at least one non-gate linear conductive segment | Michael C. Smayling | 2011-05-24 |
| 7948013 | Semiconductor device and associated layouts having linear shaped gate electrodes defined along at least five adjacent gate electrode tracks of equal pitch | Michael C. Smayling | 2011-05-24 |
| 7943966 | Integrated circuit and associated layout with gate electrode level portion including at least two complimentary transistor forming linear conductive segments and at least one non-gate linear conductive segment | Michael C. Smayling | 2011-05-17 |