Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12324230 | Semiconductor device and method | Hsi-Jung Wu, Sheng-Fu Yu, Ru-Shang Hsiao | 2025-06-03 |
| 12113120 | Gate electrode having a work-function layer including materials with different average grain sizes | Ru-Shang Hsiao, Ching-Hwanq Su, Pin Chia Su, Ling-Sung Wang | 2024-10-08 |
| 12027609 | Gate structure of semiconductor device and method of forming same | Ru-Shang Hsiao, Ying Wang | 2024-07-02 |
| 12021130 | Circuit structure with gate configuration | Ru-Shang Hsiao, Ching-Hwanq Su, Pin Chia Su, Ling-Sung Wang | 2024-06-25 |
| 11961891 | Structure for metal gate electrode and method of fabrication | Ru-Shang Hsiao, Ching-Hwanq Su, Pohan Kung, I-Shan Huang | 2024-04-16 |
| 11949000 | Metal gate structures and methods of fabricating the same in field-effect transistors | Ru-Shang Hsiao, Ching-Hwanq Su, Pin Chia Su, I-Shan Huang | 2024-04-02 |
| 11588038 | Circuit structure with gate configuration | Ru-Shang Hsiao, Ching-Hwanq Su, Pin Chia Su, Ling-Sung Wang | 2023-02-21 |
| 11502185 | Methods of manufacturing a gate electrode having metal layers with different average grain sizes | Ru-Shang Hsiao, Ching-Hwanq Su, Pin Chia Su, Ling-Sung Wang | 2022-11-15 |
| 11476351 | Metal gate structures and methods of fabricating the same in field-effect transistors | Ru-Shang Hsiao, Ching-Hwanq Su, Pin Chia Su, I-Shan Huang | 2022-10-18 |
| 11450758 | Gate structure of semiconductor device and method of forming same | Ru-Shang Hsiao, Ying Wang | 2022-09-20 |
| 11282934 | Structure for metal gate electrode and method of fabrication | Ru-Shang Hsiao, Ching-Hwanq Su, Pohan Kung, I-Shan Huang | 2022-03-22 |