Issued Patents All Time
Showing 26–50 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11018224 | Semiconductor device with epitaxial source/drain | Chia-Ta Yu, Sheng-Chen Wang, Chien-I Kuo, Li-Li Su, Feng-Cheng Yang +2 more | 2021-05-25 |
| 11018134 | Semiconductor device and method for manufacturing the same | Chung-Te Lin, Feng-Cheng Yang | 2021-05-25 |
| 10950730 | Merged source/drain features | Chun-An Lin, Feng-Cheng Yang, Tzu-Ching Lin, Li-Li Su | 2021-03-16 |
| 10868149 | Source and drain surface treatment for multi-gate field effect transistors | Wei-Han Fan, Yu-Lin Yang, Chun-Hsiang Fan, Sai-Hooi Yeong | 2020-12-15 |
| 10840243 | Semiconductor device and manufacturing method thereof | Sai-Hooi Yeong | 2020-11-17 |
| 10741642 | Formation of dislocations in source and drain regions of finFET devices | Chun Hsiung Tsai, Chien-Tai Chan, Wei-Yang Lee, Da-Wen Lin | 2020-08-11 |
| 10727340 | Strained structure of a semiconductor device | Chun-Fai Cheng, Ka-Hing Fung, Li-Ping Huang | 2020-07-28 |
| 10529803 | Semiconductor device with epitaxial source/drain | Chia-Ta Yu, Sheng-Chen Wang, Chien-I Kuo, Li-Li Su, Feng-Cheng Yang +2 more | 2020-01-07 |
| 10522424 | FinFET doping methods and structures thereof | Chun Hsiung Tsai | 2019-12-31 |
| 10510762 | Source and drain formation technique for fin-like field effect transistor | Yao-De Chiou, Chien-I Kuo, Sai-Hooi Yeong, Yen-Ming Chen | 2019-12-17 |
| 10446669 | Source and drain surface treatment for multi-gate field effect transistors | Wei-Han Fan, Yu-Lin Yang, Chun-Hsiang Fan, Sai-Hooi Yeong | 2019-10-15 |
| 10325911 | Semiconductor device and manufacturing method thereof | Sai-Hooi Yeong | 2019-06-18 |
| 10269967 | MOSFETs with multiple dislocation planes | — | 2019-04-23 |
| 10153344 | Formation of dislocations in source and drain regions of FinFET devices | Chun Hsiung Tsai, Chien-Tai Chan, Wei-Yang Lee, Da-Wen Lin | 2018-12-11 |
| 9853157 | MOSFETs with multiple dislocation planes | — | 2017-12-26 |
| 9768256 | Formation of dislocations in source and drain regions of FinFET devices | Chun Hsiung Tsai, Chien-Tai Chan, Wei-Yang Lee, Da-Wen Lin | 2017-09-19 |
| 9698054 | Strained structure of a p-type field effect transistor | Chun-Fai Cheng, Ka-Hing Fung, Li-Ping Huang | 2017-07-04 |
| 9685534 | Method for semiconductor device fabrication | Chun Hsiung Tsai | 2017-06-20 |
| 9583342 | FinFET doping methods and structures thereof | Chun Hsiung Tsai | 2017-02-28 |
| 9431404 | Techniques providing high-k dielectric metal gate CMOS | Kuan-Chung Chen, Chun-Fai Cheng | 2016-08-30 |
| 9356136 | Engineered source/drain region for n-Type MOSFET | Lilly Su, Chun-Hung Huang, Chii-Horng Li, Jyh-Huei Chen | 2016-05-31 |
| 9299803 | Method for semiconductor device fabrication | Chung Hsiung Tsai | 2016-03-29 |
| 9299838 | MOSFETs with multiple dislocation planes | — | 2016-03-29 |
| 9293534 | Formation of dislocations in source and drain regions of FinFET devices | Chun Hsiung Tsai, Chien-Tai Chan, Wei-Yang Lee, Da-Wen Lin | 2016-03-22 |
| 9178063 | Semiconductor device | Li-Ping Huang, Han-Ting Tsai, Wei Wang, Ming-Shuan Li, Hsueh-Jen Yang +1 more | 2015-11-03 |