SC

Shine C. Chung

TSMC: 72 patents #433 of 12,232Top 4%
AT AT&T: 25 patents #652 of 18,772Top 4%
HP HP: 2 patents #2,312 of 7,018Top 35%
HS Hitachi Micro Systems: 2 patents #8 of 30Top 30%
IN Intel: 2 patents #13,213 of 30,777Top 45%
AM AMD: 2 patents #3,994 of 9,279Top 45%
VI Vitelic: 1 patents #4 of 16Top 25%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
UN Unknown: 1 patents #29,356 of 83,584Top 40%
📍 San Jose, CA: #89 of 32,062 inventorsTop 1%
🗺 California: #877 of 386,348 inventorsTop 1%
Overall (All Time): #5,409 of 4,157,543Top 1%
160
Patents All Time

Issued Patents All Time

Showing 51–75 of 160 patents

Patent #TitleCo-InventorsDate
8988965 Low-pin-count non-volatile memory interface 2015-03-24
8957482 Electrical fuse and related applications Fu-Lung Hsueh, Tao Wen Chung, Po-Yao Ke 2015-02-17
8929122 Circuit and system of using a junction diode as program selector for resistive devices 2015-01-06
8923085 Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for access 2014-12-30
8917533 Circuit and system for testing a one-time programmable (OTP) memory 2014-12-23
8913449 System and method of in-system repairs or configurations for memories 2014-12-16
8913415 Circuit and system for using junction diode as program selector for one-time programmable devices 2014-12-16
8912576 Structures and techniques for using semiconductor body to construct bipolar junction transistors 2014-12-16
8879308 Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate Tao Wen Chung, Chun-Jung Lin, Yu-Jen Wang, Hung-Sen Wang 2014-11-04
8873268 Circuit and system of using junction diode as program selector for one-time programmable devices 2014-10-28
8861249 Circuit and system of a low density one-time programmable memory 2014-10-14
8854859 Programmably reversible resistive device cells using CMOS logic processes 2014-10-07
8848423 Circuit and system of using FinFET for building programmable resistive devices 2014-09-30
8830720 Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices 2014-09-09
8817563 Sensing circuit for programmable resistive device using diode as program selector 2014-08-26
8804398 Reversible resistive memory using diodes formed in CMOS processes as program selectors 2014-08-12
8760916 Circuit and system of using at least one junction diode as program selector for memories 2014-06-24
8760904 One-Time Programmable memories using junction diodes as program selectors 2014-06-24
8703571 Methods of fabricating bipolar junction transistors having a fin Po-Yao Ke, Tao Wen Chung, Fu-Lung Hsueh 2014-04-22
8649203 Reversible resistive memory using polysilicon diodes as program selectors 2014-02-11
8644049 Circuit and system of using polysilicon diode as program selector for one-time programmable devices 2014-02-04
8619488 Multi-level electrical fuse using one programming device Yung-Lung Lin, Jui-Jen Wu, Fu-Lung Hsueh 2013-12-31
8607019 Circuit and method of a memory compiler based on subtractive approach 2013-12-10
8576602 One-time programmable memories using polysilicon diodes as program selectors 2013-11-05
8570800 Memory using a plurality of diodes as program selectors with at least one being a polysilicon diode 2013-10-29