Issued Patents All Time
Showing 26–44 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6689665 | Method of forming an STI feature while avoiding or reducing divot formation | Syun-Ming Jang | 2004-02-10 |
| 6649535 | Method for ultra-thin gate oxide growth | Shih-Chang Chen | 2003-11-18 |
| 6624090 | Method of forming plasma nitrided gate dielectric layers | Chien-Hao Chen, Shih-Chang Chen | 2003-09-23 |
| 6573193 | Ozone-enhanced oxidation for high-k dielectric semiconductor devices | Yeou-Ming Lin | 2003-06-03 |
| 6566205 | Method to neutralize fixed charges in high K dielectric | Chien-Hao Chen | 2003-05-20 |
| 6511887 | Method for making FET gate oxides with different thicknesses using a thin silicon nitride layer and a single oxidation step | Syun-Ming Jang | 2003-01-28 |
| 6495422 | Methods of forming high-k gate dielectrics and I/O gate oxides for advanced logic application | Shih-Chang Chen | 2002-12-17 |
| 6465323 | Method for forming semiconductor integrated circuit microelectronic fabrication having multiple gate dielectric layers with multiple thicknesses | Shih-Chang Chen, Chen-Hua Yu | 2002-10-15 |
| 6380104 | Method for forming composite gate dielectric layer equivalent to silicon oxide gate dielectric layer | — | 2002-04-30 |
| 6362085 | Method for reducing gate oxide effective thickness and leakage current | Syun-Ming Jang, Chen-Hua Yu | 2002-03-26 |
| 6323143 | Method for making silicon nitride-oxide ultra-thin gate insulating layers for submicrometer field effect transistors | — | 2001-11-27 |
| 6319784 | Using high temperature H2 anneal to recrystallize S/D and remove native oxide simultaneously | Syun-Ming Jang | 2001-11-20 |
| 6232241 | Pre-oxidation cleaning method for reducing leakage current of ultra-thin gate oxide | Chen-Hua Yu | 2001-05-15 |
| 6225167 | Method of generating multiple oxide thicknesses by one oxidation step using NH3 nitridation followed by re-oxidation | Wei-Ming Chen | 2001-05-01 |
| 6204205 | Using H2anneal to improve the electrical characteristics of gate oxide | Syun-Ming Jang | 2001-03-20 |
| 6184155 | Method for forming a ultra-thin gate insulator layer | Syun-Ming Jang, Mong-Song Liang | 2001-02-06 |
| 6180543 | Method of generating two nitrogen concentration peak profiles in gate oxide | Syun-Ming Jang | 2001-01-30 |
| 6171911 | Method for forming dual gate oxides on integrated circuits with advanced logic devices | — | 2001-01-09 |
| 6110780 | Using NO or N.sub.2 O treatment to generate different oxide thicknesses in one oxidation step for single poly non-volatile memory | Wen-Ting Chu, Syun-Min Jang | 2000-08-29 |