Issued Patents All Time
Showing 51–75 of 94 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10923355 | Methods and systems for dopant activation using microwave radiation | Chun Hsiung Tsai, Huai-Tei Yang, Kei-Wei Chen | 2021-02-16 |
| 10872970 | Source and drain formation technique for fin-like field effect transistor | Chun Hsiung Tsai, Ziwei Fang | 2020-12-22 |
| 10868129 | Gate spacer and methods of forming | Chun Hsiung Tsai | 2020-12-15 |
| 10749010 | Method for manufacturing finFET structure with doped region | Shahaji B. More, Chun Hsiung Tsai, Cheng-Yi Peng, Shih-Chieh Chang | 2020-08-18 |
| 10749008 | Gate structure, semiconductor device and the method of forming semiconductor device | Chun Hsiung Tsai, Chien-Tai Chan, Ziwei Fang, Kei-Wei Chen, Huai-Tei Yang | 2020-08-18 |
| 10741662 | Gate spacer and method of forming | Chun Hsiung Tsai | 2020-08-11 |
| 10686074 | Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same | Chun Hsiung Tsai, Shahaji B. More, Cheng-Yi Peng, Yu-Ming Lin, Ziwei Fang | 2020-06-16 |
| 10651287 | Method for forming source/drain contacts | Shahaji B. More, Chun Hsiung Tsai, Shih-Chieh Chang, Cheng-Yi Peng | 2020-05-12 |
| 10535768 | Semiconductor structure | Chun Hsiung Tsai, Kei-Wei Chen | 2020-01-14 |
| 10522641 | Gate spacer and methods of forming | Chun Hsiung Tsai | 2019-12-31 |
| 10522356 | Methods and systems for dopant activation using microwave radiation | Chun Hsiung Tsai, Huai-Tei Yang, Kei-Wei Chen | 2019-12-31 |
| 10468500 | FinFET fabrication methods | Chun Hsiung Tsai, Cheng-Yi Peng, Yin-Pin Wang, Da-Wen Lin, Jian-Hao Chen +1 more | 2019-11-05 |
| 10431670 | Source and drain formation technique for fin-like field effect transistor | Chun Hsiung Tsai, Ziwei Fang | 2019-10-01 |
| 10396156 | Method for FinFET LDD doping | Chun Hsiung Tsai, Ya-Yun Cheng, Shahaji B. More, Cheng-Yi Peng, Wei-Yang Lee +2 more | 2019-08-27 |
| 10361279 | Method for manufacturing FinFET structure with doped region | Shahaji B. More, Chun Hsiung Tsai, Cheng-Yi Peng, Shih-Chieh Chang | 2019-07-23 |
| 10296032 | Bandgap reference circuit | Jaw-Juinn Horng, Chung-Hui Chen | 2019-05-21 |
| 10276715 | Fin field effect transistor and method for fabricating the same | Chun Hsiung Tsai, Chien-Tai Chan, Kei-Wei Chen | 2019-04-30 |
| 10164048 | Method for forming source/drain contacts | Shahaji B. More, Chun Hsiung Tsai, Shih-Chieh Chang, Cheng-Yi Peng | 2018-12-25 |
| 10153156 | Plasma enhanced atomic layer deposition | Chun Hsiung Tsai, Yuh-Ta Fan | 2018-12-11 |
| 10141417 | Gate structure, semiconductor device and the method of forming semiconductor device | Chun Hsiung Tsai, Chien-Tai Chan, Ziwei Fang, Kei-Wei Chen, Huai-Tei Yang | 2018-11-27 |
| 9978866 | Semiconductor structure and manufacturing method thereof | Chun Hsiung Tsai, Kei-Wei Chen | 2018-05-22 |
| 9711620 | Method for FinFET device | Chun Hsiung Tsai | 2017-07-18 |
| 9627212 | Methods and systems for dopant activation using microwave radiation | Chun Hsiung Tsai, Huai-Tei Yang, Kei-Wei Chen | 2017-04-18 |
| 9612606 | Bandgap reference circuit | Jaw-Juinn Horng, Chung-Hui Chen | 2017-04-04 |
| 9577070 | Gate spacers and methods of forming | Chun Hsiung Tsai | 2017-02-21 |