JC

Jong Chen

TSMC: 24 patents #1,420 of 12,232Top 15%
Overall (All Time): #165,722 of 4,157,543Top 4%
25
Patents All Time

Issued Patents All Time

Showing 1–25 of 25 patents

Patent #TitleCo-InventorsDate
6724036 Stacked-gate flash memory cell with folding gate and increased coupling ratio Chia-Ta Hsieh, Di-Son Kuo, Yai-Fen Lin, Chrong-Jung Lin, Hung-Der Su 2004-04-20
6495880 Method to fabricate a flash memory cell with a planar stacked gate Chrong-Jung Lin, Hung-Der Su, Di-Son Kuo 2002-12-17
6437397 Flash memory cell with vertically oriented channel Chrong-Jung Lin, Shui-Hung Chen, Di-Son Kuo 2002-08-20
6348382 Integration process to increase high voltage breakdown performance Hung-Der Su, Chrong-Jung Lin, Wen-Ting Chu 2002-02-19
6297098 Tilt-angle ion implant to improve junction breakdown in flash memory application Chrong-Jung Lin, Hung-Der Su, Wen-Ting Chu 2001-10-02
6261905 Flash memory structure with stacking gate formed using damascene-like structure Chrong-Jong Lin, Hung-Der Su, Wen-Ting Chu 2001-07-17
6251744 Implant method to improve characteristics of high voltage isolation and high voltage breakdown Hung-Der Su, Chrong-Jung Lin, Wen-Ting Chu, Hung-Cheng Sung, Di-Son Kuo 2001-06-26
6190969 Method to fabricate a flash memory cell with a planar stacked gate Chrong-Jung Lin, Hung-Der Su, Di-Son Kuo 2001-02-20
6172395 Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured thereby Chrong-Jung Lin 2001-01-09
6153494 Method to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flash Chia-Ta Hsieh, Di-Son Kuo, Yai-Fen Lin, Chrong-Jung Lin, Hung-Der Su 2000-11-28
6133096 Process for simultaneously fabricating a stack gate flash memory cell and salicided periphereral devices Hung-Der Su, Chrong-Jung Lin, Di-Son Kuo 2000-10-17
6130168 Using ONO as hard mask to reduce STI oxide loss on low voltage device in flash or EPROM process Wen-Ting Chu, Di-Son Kuo, Chrong-Jung Lin, Hung-Der Su 2000-10-10
6127226 Method for forming vertical channel flash memory cell using P/N junction isolation Chrong-Jung Lin, Shui-Hung Chen, Di-Son Kuo 2000-10-03
6127227 Thin ONO thickness control and gradual gate oxidation suppression by b. N.su2 treatment in flash memory Chrong-Jung Lin, Hung-Der Su, Di-Son Kuo 2000-10-03
6124177 Method for making deep sub-micron mosfet structures having improved electrical characteristics Chrong-Jung Lin, Hung-Der Su, Wen-Ting Chu 2000-09-26
6078076 Vertical channels in split-gate flash memory cell Chrong-Jung Lin, Chia-Ta Hsieh, Di-Son Kuo 2000-06-20
6074915 Method of making embedded flash memory with salicide and sac structure Chrong-Jung Lin, Hung-Der Su, Di-Son Kuo 2000-06-13
6066874 Flash memory cell with vertical channels, and source/drain bus lines Chrong-Jung Lin, Shui-Hung Chen, Di-Son Kuo 2000-05-23
6063664 Method of making EEPROM with trenched structure Chrong-Jung Lin, Di-Son Kuo 2000-05-16
6037223 Stack gate flash memory cell featuring symmetric self aligned contact structures Hung-Der Su, Chrong-Jung Lin, Di-Son Kuo 2000-03-14
6013551 Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured thereby Chrong-Jung Lin 2000-01-11
6011288 Flash memory cell with vertical channels, and source/drain bus lines Chrong-Jung Lin, Shui-Hung Chen, Di-Son Kuo 2000-01-04
6001687 Process for forming self-aligned source in flash cell using SiN spacer as hard mask Wen-Ting Chu, Di-Son Kuo, Chrong-Jung Lin, Hung-Der Su 1999-12-14
5970341 Method for forming vertical channels in split-gate flash memory cell Chrong-Jung Lin, Chia-Ta Hsieh, Di-Son Kuo 1999-10-19
5960284 Method for forming vertical channel flash memory cell and device manufactured thereby Chrong-Jung Lin, Shui-Hung Chen, Di-Son Kuo 1999-09-28