HL

Hungtse Lin

TSMC: 4 patents #4,745 of 12,232Top 40%
📍 Luzhu District, TW: #16 of 112 inventorsTop 15%
Overall (All Time): #1,265,419 of 4,157,543Top 35%
4
Patents All Time

Issued Patents All Time

Showing 1–4 of 4 patents

Patent #TitleCo-InventorsDate
6818533 Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects Sheng-Hsiung Chen, Shun-Long Chen, Ming-Shing Tsai, Lan-Chieh Shih 2004-11-16
6730580 Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing Sheng-Hsiung Chen, Shun-Long Chen, Naite Chen 2004-05-04
6560862 Modified pad for copper/low-k Sheng-Hsiung Chen, Shun-Long Chen 2003-05-13
6518166 Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer Sheng-Hsiung Chen, Shun-Long Chen, Frank Hsu, Tsu Shih 2003-02-11