Issued Patents All Time
Showing 26–50 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10355108 | Method of forming a fin field effect transistor comprising two etching steps to define a fin structure | Hung-Ming Chen, Tsung-Lin Lee, Chang-Yun Chang, Clement Hsingjen Wann | 2019-07-16 |
| 10290550 | Strain enhancement for FinFETs | Tsung-Lin Lee, Chih Chieh Yeh, Hung-Li Chiang, Wei-Jen Lai | 2019-05-14 |
| 10141429 | FinFET having isolation structure and method of forming the same | Chia-Chung Chen, Fu-Huan Tsai | 2018-11-27 |
| 9997616 | Semiconductor device having a strained region | Chih Chieh Yeh, Hung-Li Chiang, Tsung-Lin Lee | 2018-06-12 |
| 9953885 | STI shape near fin bottom of Si fin in bulk FinFET | Tsung-Lin Lee, Hung-Ming Chen, Chang-Yun Chang | 2018-04-24 |
| 9761666 | Strained channel field effect transistor | Mark van Dal, Gerben Doornbos, Georgios Vellianitis, Tsung-Lin Lee | 2017-09-12 |
| 9721829 | FinFETs with different fin height and EPI height setting | Hung-Li Chiang, Wei-Jen Lai, Tsung-Lin Lee, Chih Chieh Yeh | 2017-08-01 |
| 9711412 | FinFETs with different fin heights | Tsung-Lin Lee, Chih Chieh Yeh, Chang-Yun Chang | 2017-07-18 |
| 9712461 | Data caching system and method for ethernet device | — | 2017-07-18 |
| 9653542 | FinFET having isolation structure and method of forming the same | Chia-Chung Chen, Fu-Huan Tsai | 2017-05-16 |
| 9640441 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Tsung-Lin Lee, Chih Chieh Yeh | 2017-05-02 |
| 9613029 | Techniques for transliterating input text from a first character set to a second character set | Fan Yang, Kirill Buryak, Baohua Liao | 2017-04-04 |
| 9577071 | Method of making a strained structure of a semiconductor device | Tsung-Lin Lee, Chih Chieh Yeh, Cheng-Yi Peng, Clement Hsingjen Wann | 2017-02-21 |
| 9564529 | Method for fabricating a strained structure and structure formed | Tsung-Lin Lee, Chih-Hao Chang, Chih-Hsin Ko, Jeff J. Xu | 2017-02-07 |
| 9484462 | Fin structure of fin field effect transistor | Hung-Ming Chen, Tsung-Lin Lee, Chang-Yun Chang, Clement Hsingjen Wann | 2016-11-01 |
| 9425102 | FinFETs with different fin heights | Tsung-Lin Lee, Chih Chieh Yeh, Chang-Yun Chang | 2016-08-23 |
| 9419134 | Strain enhancement for FinFETs | Tsung-Lin Lee, Chih Chieh Yeh, Hung-Li Chiang, Wei-Jen Lai | 2016-08-16 |
| 9397097 | Gate structure for semiconductor device | Tsung-Lin Lee, Chih Chieh Yeh, Wei-Jen Lai | 2016-07-19 |
| 9385046 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Tsung-Lin Lee, Chih Chieh Yeh | 2016-07-05 |
| 9337269 | Buried-channel FinFET device and method | Fu-Huan Tsai, Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang | 2016-05-10 |
| 9285954 | Dynamically-generated selectable option icons | Fan Yang | 2016-03-15 |
| 9263342 | Semiconductor device having a strained region | Tsung-Lin Lee, Hung-Li Chiang, Chih Chieh Yeh | 2016-02-16 |
| 9262412 | Techniques for predictive input method editors | Fan Yang, Cibu Chalissery Johny | 2016-02-16 |
| 9257344 | FinFETs with different fin height and EPI height setting | Hung-Li Chiang, Wei-Jen Lai, Tsung-Lin Lee, Chih Chieh Yeh | 2016-02-09 |
| 9177801 | FinFET device having a strained region | Tsung-Lin Lee, Hung-Li Chiang, Chih Chieh Yeh | 2015-11-03 |