Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12368070 | LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI region | Chun-Chieh Fang, Chien-Chang Huang, Jian Wu, Ming-Chi Wu, Jung-Yu CHENG +3 more | 2025-07-22 |
| 11990493 | Image sensor device with reflective structure | Chun-Chieh Fang, Ming-Chi Wu, Ji Heng Jiang, Chien Nan Tu, Yu-Lung Yeh +2 more | 2024-05-21 |
| 11393937 | QE approach by double-side, multi absorption structure | Po-Han Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo | 2022-07-19 |
| 11342372 | Image sensor device with reflective layer | Chun-Chieh Fang, Ming-Chi Wu, Ji Heng Jiang, Chien Nan Tu, Yu-Lung Yeh +2 more | 2022-05-24 |
| 10879406 | QE approach by double-side, multi absorption structure | Po-Han Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo | 2020-12-29 |
| 10784150 | Semiconductor structure and manufacturing method thereof | Ching-Chung Su, Jiech-Fun Lu, Jian Wu, Che-Hsiang Hsueh, Ming-Chi Wu +2 more | 2020-09-22 |
| 10734427 | Method for forming image sensor device | Chun-Chieh Fang, Ming-Chi Wu, Ji Heng Jiang, Chien Nan Tu, Yu-Lung Yeh +2 more | 2020-08-04 |
| 10707361 | QE approach by double-side, multi absorption structure | Po-Han Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo | 2020-07-07 |
| 10553733 | QE approach by double-side, multi absorption structure | Po-Han Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo | 2020-02-04 |
| 10276427 | Semiconductor structure and manufacturing method thereof | Ching-Chung Su, Jiech-Fun Lu, Jian Wu, Che-Hsiang Hsueh, Ming-Chi Wu +2 more | 2019-04-30 |
| 10211244 | Image sensor device with reflective structure and method for forming the same | Chun-Chieh Fang, Ming-Chi Wu, Ji Heng Jiang, Chien Nan Tu, Yu-Lung Yeh +2 more | 2019-02-19 |
| 10153319 | CMOS image sensor with dual damascene grid design having absorption enhancement structure | Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh | 2018-12-11 |
| 10056427 | Front side illuminated image sensor device structure and method for forming the same | Ji Heng Jiang, Ming-Chi Wu, Chien Nan Tu, Yu-Lung Yeh | 2018-08-21 |
| 9984918 | Semiconductor structure and manufacturing method thereof | Ching-Chung Su, Jiech-Fun Lu, Jian Wu, Che-Hsiang Hsueh, Ming-Chi Wu +2 more | 2018-05-29 |
| 9985072 | CMOS image sensor with dual damascene grid design having absorption enhancement structure | Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh | 2018-05-29 |
| 8293649 | Release accumulative charges on wafers using O2 neutralization | Ting-Yi Lin | 2012-10-23 |
| 8263495 | Release accumulative charges by tuning ESC voltages in via-etchers | Ting-Yi Lin, Chuang Tse Chuan, Miau-Shing Tsay, Ming Li Wu | 2012-09-11 |