Issued Patents All Time
Showing 126–150 of 157 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9246004 | Strained structures of semiconductor devices | Chih-Hsin Ko, Clement Hsingjen Wann | 2016-01-26 |
| 9233496 | Adjustment mechanism of mold system having electrically adjusting and positioning functions | Cheng-Hao Chiu, Chieh-Ju Wu, Kai-En Chang | 2016-01-12 |
| 9224734 | CMOS devices with reduced leakage and methods of forming the same | Yi-Jing Lee, Chih-Hsin Ko, Clement Hsingjen Wann | 2015-12-29 |
| 9209066 | Isolation structure of semiconductor device | Shu-Han Chen, Chih-Hsin Ko, Clement Hsingjen Wann | 2015-12-08 |
| 9209023 | Growing III-V compound semiconductors from trenches filled with intermediate layers | Clement Hsingjen Wann, Chih-Hsin Ko | 2015-12-08 |
| 9196709 | Methods for forming semiconductor regions in trenches | Yi-Jing Lee, Chih-Hsin Ko, Clement Hsingjen Wann | 2015-11-24 |
| 9184050 | Inverted trapezoidal recess for epitaxial growth | Clement Hsingjen Wann, Chih-Hsin Ko | 2015-11-10 |
| 9159824 | FinFETs with strained well regions | Yi-Jing Lee, Chi-Wen Liu, Chih-Hsin Ko, Clement Hsingjen Wann | 2015-10-13 |
| 9153582 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Chih-Hsin Ko | 2015-10-06 |
| 9123633 | Methods for forming semiconductor regions in trenches | Yi-Jing Lee, Chih-Hsin Ko, Clement Hsingjen Wann | 2015-09-01 |
| 9105654 | Source/drain profile for FinFET | Ta-Chun Ma, Chih-Hsin Ko, Clement Hsingjen Wann | 2015-08-11 |
| 9087902 | FinFETs with strained well regions | Yi-Jing Lee, Chih-Hsin Ko, Clement Hsingjen Wann | 2015-07-21 |
| 9076819 | Contact structure of semiconductor device | Chih-Hsin Ko, Clement Hsingjen Wann | 2015-07-07 |
| 8994002 | FinFET having superlattice stressor | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Chih-Hsin Ko | 2015-03-31 |
| 8969156 | Semiconductor structures and methods with high mobility and high energy bandgap materials | Chih-Hsin Ko, Clement Hsingjen Wann | 2015-03-03 |
| 8878302 | Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer | Chao-Ching Cheng, Ji-Yin Tsai, Chih-Hsin Ko, Clement Hsingjen Wann | 2014-11-04 |
| 8841701 | FinFET device having a channel defined in a diamond-like shape semiconductor structure | You-Ru Lin, Chih-Hsin Ko, Clement Hsingjen Wann | 2014-09-23 |
| 8836016 | Semiconductor structures and methods with high mobility and high energy bandgap materials | Chih-Hsin Ko, Clement Hsingjen Wann | 2014-09-16 |
| 8815712 | Method for epitaxial re-growth of semiconductor region | Cheng-Tien Wan, You-Ru Lin, Yi-Jing Lee, Chih-Hsin Ko, Clement Hsingjen Wann | 2014-08-26 |
| 8786019 | CMOS FinFET device | Chih-Hsin Ko, Clement Hsingjen Wann | 2014-07-22 |
| 8759203 | Growing III-V compound semiconductors from trenches filled with intermediate layers | Clement Hsingjen Wann, Chih-Hsin Ko | 2014-06-24 |
| 8742509 | Apparatus and method for FinFETs | Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Chih-Hsin Ko | 2014-06-03 |
| 8721148 | LGF plate-to-plate manufacturing method and structure thereof | Hsin-Yi Lai, Erh-Ming Hsieh, Cheng-Hao Chiu | 2014-05-13 |
| 8716765 | Contact structure of semiconductor device | Chih-Hsin Ko, Clement Hsingjen Wann | 2014-05-06 |
| 8629012 | Method for forming antimony-based FETs monolithically | Heng-Kuang Lin, Pei-Chin Chiu, Jen-Inn Chyi, Han-Chieh Ho, Clement Hsingjen Wann +1 more | 2014-01-14 |