Issued Patents All Time
Showing 201–225 of 262 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6271560 | Single-poly EPROM cell with CMOS compatible programming voltages | Albert Bergemont | 2001-08-07 |
| 6262460 | Long channel MOS transistor that utilizes a schottky diode to increase the threshold voltage of the transistor | Pavel Poplevine, Albert Bergemont | 2001-07-17 |
| 6249010 | Dielectric-based anti-fuse cell with polysilicon contact plug and method for its manufacture | Albert Bergemont | 2001-06-19 |
| 6236082 | Floating gate semiconductor device with reduced erase voltage | Albert Bergemont | 2001-05-22 |
| 6229739 | Sense amplifier having a bias circuit with a reduced size | Pavel Poplevine, Albert Bergemont | 2001-05-08 |
| 6218688 | Schottky diode with reduced size | Pavel Poplevine, Albert Bergemont | 2001-04-17 |
| 6218866 | Semiconductor device for prevention of a floating gate condition on an input node of a MOS logic circuit and a method for its manufacture | Pavel Poplevine | 2001-04-17 |
| 6208557 | EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming | Albert Bergemont | 2001-03-27 |
| 6190968 | Method for forming EPROM and flash memory cells with source-side injection | Albert Bergemont, Christoph Pichler | 2001-02-20 |
| 6188056 | Solid state optical imaging pixel with resistive load | Frank R. Bryant, Marco Sabatini | 2001-02-13 |
| 6184552 | Non-volatile memory cell with non-trenched substrate | Albert Bergemont | 2001-02-06 |
| 6184557 | I/O circuit that utilizes a pair of well structures as resistors to delay an ESD event and as diodes for ESD protection | Pavel Poplevine, Hengyang (James) Lin, Albert Bergemont | 2001-02-06 |
| 6180994 | Array of sidewall-contacted antifuses having diffused bit lines | Albert Bergemont | 2001-01-30 |
| 6177315 | Method of fabricating a high density EEPROM array | Albert Bergemont | 2001-01-23 |
| 6169310 | Electrostatic discharge protection device | Pavel Poplevine, Albert Bergemont, Hengyang (James) Lin | 2001-01-02 |
| 6166421 | Polysilicon fuse that provides an open current path when programmed without exposing the fuse to the environment | Albert Bergemont | 2000-12-26 |
| 6157574 | Erasable frohmann-bentchkowsky memory transistor that stores multiple bits of data | Albert Bergemont | 2000-12-05 |
| 6146962 | Method for forming a DRAM cell with a stacked capacitor | Albert Bergemont | 2000-11-14 |
| 6141246 | Memory device with sense amplifier that sets the voltage drop across the cells of the device | Itai Derman, Moshe Meyassed | 2000-10-31 |
| 6137721 | Memory device having erasable frohmann-bentchkowsky EPROM cells that use a plate-to-floating gate coupled voltage during erasure | Albert Bergemont | 2000-10-24 |
| 6137724 | Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages | Albert Bergemont | 2000-10-24 |
| 6137723 | Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure | Albert Bergemont | 2000-10-24 |
| 6137722 | Memory array having Frohmann-Bentchkowsky EPROM cells with a reduced number of access transistors | Albert Bergemont | 2000-10-24 |
| 6130840 | Memory cell having an erasable Frohmann-Bentchkowsky memory transistor | Albert Bergemont | 2000-10-10 |
| 6122204 | Sense amplifier having a bias circuit with a reduced size | Pavel Poplevine, Albert Bergemont | 2000-09-19 |