Issued Patents All Time
Showing 76–100 of 190 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6469334 | Ferroelectric field effect transistor | Koji Arita, Shinichiro Hayashi, Tatsuo Otsuki | 2002-10-22 |
| 6454964 | Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same | Michael C. Scott | 2002-09-24 |
| 6447838 | Integrated circuit capacitors with barrier layer and process for making the same | Masamichi Azuma, Eiji Fujii, Yasuhiro Uemoto, Shinichiro Hayashi, Toru Nasu +5 more | 2002-09-10 |
| 6448190 | Method and apparatus for fabrication of integrated circuit by selective deposition of precursor liquid | Shinichiro Hayashi, Larry D. McMillan | 2002-09-10 |
| 6441414 | Ferroelectric field effect transistor, memory utilizing same, and method of operating same | Myoungho Lim, Vikram Joshi, Jeffrey W. Bacon, Joseph D. Cuchiaro, Larry D. McMillan | 2002-08-27 |
| 6437380 | Ferroelectric device with bismuth tantalate capping layer and method of making same | Myoungho Lim, Vikram Joshi, Narayan Solayappan, Larry D. McMillan | 2002-08-20 |
| 6413883 | Method of liquid deposition by selection of liquid viscosity and other precursor properties | Shinichiro Hayashi, Larry D. McMillan | 2002-07-02 |
| 6404003 | Thin film capacitors on silicon germanium substrate | Larry D. McMillan, Koji Arita, Masamichi Azuma | 2002-06-11 |
| 6383555 | Misted precursor deposition apparatus and method with improved mist and mist flow | Shinichiro Hayashi, Larry D. McMillan | 2002-05-07 |
| 6376691 | Metal organic precursors for transparent metal oxide thin films and method of making same | Jolanta Bozena Celinska, Joseph D. Cuchiaro, Jeffrey W. Bacon, Larry D. McMillan | 2002-04-23 |
| 6372286 | Barium strontium titanate integrated circuit capacitors and process for making the same | Masamichi Azuma, Michael C. Scott, Joseph D. Cuchiaro | 2002-04-16 |
| 6373743 | Ferroelectric memory and method of operating same | Zheng Chen, Myoungho Lim, Vikram Joshi, Larry D. McMillan | 2002-04-16 |
| 6370056 | Ferroelectric memory and method of operating same | Zheng Chen, Vikram Joshi, Myoungho Lim, Larry D. McMillan | 2002-04-09 |
| 6365927 | Ferroelectric integrated circuit having hydrogen barrier layer | Joseph D. Cuchiaro, Larry D. McMillan | 2002-04-02 |
| 6358758 | Low imprint ferroelectric material for long retention memory and method of making the same | Koji Arita, Shinichiro Hayashi, Joseph D. Cuchiaro | 2002-03-19 |
| 6339238 | Ferroelectric field effect transistor, memory utilizing same, and method of operating same | Myoungho Lim, Vikram Joshi, Joseph D. Cuchiaro, Larry D. McMillan | 2002-01-15 |
| 6327135 | Thin film capacitors on gallium arsenide substrate | Masamichi Azuma, Michael C. Scott, Toshiyuki Ueda | 2001-12-04 |
| 6326315 | Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same | Kiyoshi Uchiyama, Koji Arita, Narayan Solayappan | 2001-12-04 |
| 6310373 | Metal insulator semiconductor structure with polarization-compatible buffer layer | Masamichi Azuma | 2001-10-30 |
| 6285048 | Barium strontium titanate integrated circuit capacitors and process for making the same | Masamichi Azuma, Michael C. Scott, Joseph D. Cuchiaro | 2001-09-04 |
| 6281534 | Low imprint ferroelectric material for long retention memory and method of making the same | Koji Arita, Shinichiro Hayashi, Joseph D. Cuchiaro | 2001-08-28 |
| 6258733 | Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size | Narayan Solayappan, Robert W. Grant, Larry D. McMillan | 2001-07-10 |
| 6255121 | Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor | Koji Arita, Shinichiro Hayashi, Tatsuo Otsuki | 2001-07-03 |
| 6245580 | Low temperature process for fabricating layered superlattice materials and making electronic devices including same | Narayan Solayappan, Vikram Joshi | 2001-06-12 |
| 6236076 | Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material | Koji Arita | 2001-05-22 |