Issued Patents All Time
Showing 51–66 of 66 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8207556 | Group III nitride semiconductor device and epitaxial substrate | Takashi Kyono, Yusuke Yoshizumi, Katsushi Akita, Masaki Ueno, Takamichi Sumitomo +1 more | 2012-06-26 |
| 8183071 | Method for producing nitride semiconductor optical device and epitaxial wafer | Katsushi Akita, Takashi Kyono, Takamichi Sumitomo, Yusuke Yoshizumi, Masaki Ueno +1 more | 2012-05-22 |
| 8183596 | High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor | Masaki Ueno, Takashi Kyono, Takamichi Sumitomo, Yusuke Yoshizumi | 2012-05-22 |
| 8173458 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element | Yusuke Yoshizumi, Masaki Ueno, Fumitake Nakanishi | 2012-05-08 |
| 8174035 | Nitride-based semiconductor light emitting device | Takamichi Sumitomo, Masaki Ueno, Takashi Kyono, Yusuke Yoshizumi | 2012-05-08 |
| 8148716 | Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device | Masaki Ueno, Takashi Kyono, Yusuke Yoshizumi | 2012-04-03 |
| 8107507 | Group III nitride semiconductor element and epitaxial wafer | Yusuke Yoshizumi, Masaki Ueno, Fumitake Nakanishi | 2012-01-31 |
| 8067257 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device | Masaki Ueno, Takashi Kyono, Katsushi Akita, Yusuke Yoshizumi, Takamichi Sumitomo +1 more | 2011-11-29 |
| 8053806 | Group III nitride semiconductor device and epitaxial substrate | Takashi Kyono, Yusuke Yoshizumi, Katsushi Akita, Masaki Ueno, Takamichi Sumitomo +1 more | 2011-11-08 |
| 8048702 | Method of fabricating nitride-based semiconductor optical device | Yusuke Yoshizumi, Masaki Ueno, Takashi Kyono, Katsushi Akita | 2011-11-01 |
| 7955881 | Method of fabricating quantum well structure | Katsushi Akita, Takamichi Sumitomo, Takashi Kyono, Masaki Ueno | 2011-06-07 |
| 7933303 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device | Yusuke Yoshizumi, Takashi Kyono, Masahiro Adachi, Katsushi Akita, Masaki Ueno +5 more | 2011-04-26 |
| 7873088 | Group III nitride semiconductor element and epitaxial wafer | Yusuke Yoshizumi, Masaki Ueno, Fumitake Nakanishi | 2011-01-18 |
| 7858963 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device | Masaki Ueno, Takashi Kyono, Katsushi Akita, Yusuke Yoshizumi, Takamichi Sumitomo +1 more | 2010-12-28 |
| 7851243 | Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device | Masaki Ueno, Takashi Kyono, Katsushi Akita, Yusuke Yoshizumi, Takamichi Sumitomo +1 more | 2010-12-14 |
| 7851821 | Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device | Takashi Kyono, Yusuke Yoshizumi, Katsushi Akita, Masaki Ueno, Takamichi Sumitomo +1 more | 2010-12-14 |