SH

Shinichiro Hayashi

Sumitomo Electric Industries: 30 patents #489 of 21,551Top 3%
SY Symetrix: 27 patents #7 of 73Top 10%
PA Panasonic: 19 patents #1,080 of 21,108Top 6%
University Of Texas System: 3 patents #1,041 of 6,559Top 20%
SP Sakura Color Products: 3 patents #35 of 115Top 35%
Tdk: 2 patents #1,902 of 3,796Top 55%
Mitsubishi Electric: 2 patents #11,187 of 25,717Top 45%
AD Advantest: 2 patents #465 of 1,193Top 40%
HI Hitachi: 1 patents #17,742 of 28,497Top 65%
PI Piolax: 1 patents #85 of 198Top 45%
MC Murata Manufacturing Co.: 1 patents #3,462 of 5,295Top 70%
TU Tohoku University: 1 patents #615 of 1,680Top 40%
📍 Kobe, CO: #2 of 3 inventorsTop 70%
Overall (All Time): #32,752 of 4,157,543Top 1%
66
Patents All Time

Issued Patents All Time

Showing 26–50 of 66 patents

Patent #TitleCo-InventorsDate
6756621 Ferroelectric capacitor device Toru Nasu 2004-06-29
6753566 Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride Toshie Kutsunai, Takumi Mikawa, Yuji Judai 2004-06-22
6737697 Semiconductor device and method and system for fabricating the same Toshie Kutsunai, Yuji Judai, Yoshihisa Nagano 2004-05-18
6723637 Semiconductor device and method for fabricating the same Toshie Kutsunai, Takumi Mikawa, Yuji Judai 2004-04-20
6653156 Ferroelectric device with capping layer and method of making same Tatsuo Otsuki, Carlos A. Paz de Araujo 2003-11-25
6590252 Semiconductor device with oxygen diffusion barrier layer termed from composite nitride Toshie Kutsunai, Takumi Mikawa, Yuji Judai 2003-07-08
6541375 DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention Koji Arita 2003-04-01
6541806 Ferroelectric device with capping layer and method of making same Tatsuo Otsuki, Carlos A. Paz de Araujo 2003-04-01
6541279 Method for forming an integrated circuit Vikram Joshi, Narayan Solayappan, Joseph D. Cuchiaro, Carlos A. Paz de Araujo 2003-04-01
6495878 Interlayer oxide containing thin films for high dielectric constant application Vikram Joshi, Narayan Solayappan, Joseph D. Cuchiaro, Carlos A. Paz de Araujo 2002-12-17
6469334 Ferroelectric field effect transistor Koji Arita, Tatsuo Otsuki, Carlos A. Paz de Araujo 2002-10-22
6448598 Semiconductor memory Yoshihisa Nagano, Yasuhiro Uemoto 2002-09-10
6447838 Integrated circuit capacitors with barrier layer and process for making the same Masamichi Azuma, Eiji Fujii, Yasuhiro Uemoto, Toru Nasu, Yoshihiro Shimada +5 more 2002-09-10
6448190 Method and apparatus for fabrication of integrated circuit by selective deposition of precursor liquid Larry D. McMillan, Carlos A. Paz de Araujo 2002-09-10
6440754 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures Tatsuo Otsuki 2002-08-27
6413883 Method of liquid deposition by selection of liquid viscosity and other precursor properties Larry D. McMillan, Carlos A. Paz de Araujo 2002-07-02
6383555 Misted precursor deposition apparatus and method with improved mist and mist flow Larry D. McMillan, Carlos A. Paz de Araujo 2002-05-07
6362503 Low temperature process for fabricating layered superlattice materials and making electronic devices including same 2002-03-26
6358758 Low imprint ferroelectric material for long retention memory and method of making the same Koji Arita, Joseph D. Cuchiaro, Carlos A. Paz de Araujo 2002-03-19
6355619 Peptide tumor cell growth inhibitors Edmund Miller 2002-03-12
6351004 Tunneling transistor applicable to nonvolatile memory Yasuhiro Shimada, Kiyoshi Uchiyama, Keisuke Tanaka 2002-02-26
6320604 Multi power type thermal head Bunji Moriya, Kazuhito UCHIDA 2001-11-20
6281534 Low imprint ferroelectric material for long retention memory and method of making the same Koji Arita, Joseph D. Cuchiaro, Carlos A. Paz de Araujo 2001-08-28
6265738 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures Tatsuo Otsuki 2001-07-24
6255121 Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor Koji Arita, Tatsuo Otsuki, Carlos A. Paz de Araujo 2001-07-03