Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7598556 | Ferroelectric memory device | Takumi Mikawa | 2009-10-06 |
| 7557011 | Semiconductor device and method for fabricating the same | Takumi Mikawa, Toshie Kutsunai | 2009-07-07 |
| 7413949 | Capacitor and method for fabricating the same | Takumi Mikawa, Shinichiro Hayashi | 2008-08-19 |
| 7326990 | Semiconductor device and method for fabricating the same | Takumi Mikawa, Toshie Kutsunai | 2008-02-05 |
| 7180122 | Semiconductor device and method for fabricating the same | Takumi Mikawa, Toshie Kutsunai | 2007-02-20 |
| 7157348 | Method for fabricating capacitor device | Takumi Mikawa, Atsushi Noma | 2007-01-02 |
| 7060552 | Memory device with hydrogen-blocked ferroelectric capacitor | Takumi Mikawa, Toshie Kutsunai | 2006-06-13 |
| 6963095 | Ferroelectric memory device and method for fabricating the same | Takumi Mikawa, Toshie Kutsunai | 2005-11-08 |
| 6960800 | Semiconductor device and method for fabricating the same | Takumi Mikawa | 2005-11-01 |
| 6939725 | Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film | Toshie Kutsunai, Shinichiro Hayashi, Yoshihisa Nagano | 2005-09-06 |
| 6891715 | Capacitor and method for fabricating the same | Takumi Mikawa, Shinichiro Hayashi | 2005-05-10 |
| 6849887 | Semiconductor device and method for fabricating the same | Yoshihisa Nagano, Toshie Kutsunai, Yasuhiro Uemoto, Eiji Fujii | 2005-02-01 |
| 6818498 | Capacitance element and method of manufacturing the same | Takumi Mikawa, Yoshihisa Nagano | 2004-11-16 |
| 6753566 | Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride | Toshie Kutsunai, Shinichiro Hayashi, Takumi Mikawa | 2004-06-22 |
| 6750492 | Semiconductor memory with hydrogen barrier | Takumi Mikawa, Toshie Kutsunai | 2004-06-15 |
| 6737697 | Semiconductor device and method and system for fabricating the same | Toshie Kutsunai, Shinichiro Hayashi, Yoshihisa Nagano | 2004-05-18 |
| 6723637 | Semiconductor device and method for fabricating the same | Toshie Kutsunai, Shinichiro Hayashi, Takumi Mikawa | 2004-04-20 |
| 6602721 | Method for fabricating ferroelectric memory device and method for fabricating the same | Takumi Mikawa, Toshie Kutsunai | 2003-08-05 |
| 6590252 | Semiconductor device with oxygen diffusion barrier layer termed from composite nitride | Toshie Kutsunai, Shinichiro Hayashi, Takumi Mikawa | 2003-07-08 |
| 6573111 | Method of making a semiconductor device with capacitor element | Yoshihisa Nagano, Yasuhiro Uemoto, Masamichi Azuma, Eiji Fujii | 2003-06-03 |
| 6562677 | Capacitance element and method of manufacturing the same | Takumi Mikawa, Yoshihisa Nagano | 2003-05-13 |
| 6498094 | Method for providing a contact hole formed in an insulating film | Keisaku Nakao, Yoichi Sasai, Atsushi Noma | 2002-12-24 |
| 6174822 | Semiconductor device and method for fabricating the same | Yoshihisa Nagano, Toshie Kutsunai, Yasuhiro Uemoto, Eiji Fujii | 2001-01-16 |
| 6166424 | Capacitance structure for preventing degradation of the insulating film | Takumi Mikawa, Yoshihisa Nagano | 2000-12-26 |