AT

Akiyoshi Tamura

Sumitomo Electric Industries: 21 patents #970 of 21,551Top 5%
PA Panasonic: 8 patents #3,315 of 21,108Top 20%
📍 Suita, JP: #28 of 1,253 inventorsTop 3%
Overall (All Time): #132,270 of 4,157,543Top 4%
29
Patents All Time

Issued Patents All Time

Showing 1–25 of 29 patents

Patent #TitleCo-InventorsDate
8716756 Semiconductor device Kazushi Nakazawa 2014-05-06
8436399 Semiconductor device Kazushi Nakazawa 2013-05-07
8017975 Semiconductor device Keiichi Murayama, Hirotaka Miyamoto, Kenichi MIYAJIMA 2011-09-13
7989845 Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof Keiichi Murayama, Hirotaka Miyamoto, Kenichi MIYAJIMA 2011-08-02
7728357 Heterojunction bipolar transistor and manufacturing method thereof Keiichi Murayama, Hirotaka Miyamoto, Kenichi MIYAJIMA 2010-06-01
7495268 Semiconductor device and manufacturing method of the same Yoshiaki Kato, Yoshiharu Anda 2009-02-24
7301181 Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminum Keiichi Murayama, Yorito Ota 2007-11-27
7238542 Manufacturing method for compound semiconductor device Yoshiaki Kato, Tuneo Yamaguchi 2007-07-03
7176099 Hetero-junction bipolar transistor and manufacturing method thereof Keiichi Murayama, Masanobu Nogome 2007-02-13
7144765 Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof Yoshiharu Anda 2006-12-05
7091528 Semiconductor device Masanobu Nogome, Keiichi Murayama 2006-08-15
7012285 Semiconductor device Tadayoshi Nakatsuka, Toshiharu Tambo, Takahiro Kitazawa, Katsuyoshi Tara 2006-03-14
7012337 Semiconductor device including a photosensitive resin covering at least a portion of a substrate having a via hole Masanobu Nogome, Keiichi Murayama, Kazutsune Miyanaga, Yoshitaka Kuroishi 2006-03-14
7001820 Heterojunction bipolar transistor and method for fabricating the same Kenichi MIYAJIMA, Keiichi Murayama 2006-02-21
6982141 Semiconductor device and manufacturing method thereof Masanobu Nogome, Keiichi Murayama, Kazutsune Miyanaga, Yoshitaka Kuroishi 2006-01-03
6967360 Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof Yoshiharu Anda 2005-11-22
6953729 Heterojunction field effect transistor and manufacturing method thereof Keisuke Kojima, Yoshiaki Kato 2005-10-11
6903388 Hetero-junction bipolar transistor and manufacturing method thereof Keiichi Murayama, Masanobu Nogome 2005-06-07
6380573 Semiconductor memory device and method for producing the same 2002-04-30
6037200 Compound semiconductor device and fabrication method Tomoya Uda 2000-03-14
5994728 Field effect transistor and method for producing the same Tomoya Uda 1999-11-30
5942772 Semiconductor device and method of manufacturing the same Katsunori Nishii, Mitsuru Nishitsuji, Takahiro Yokoyama 1999-08-24
5907177 Semiconductor device having a tapered gate electrode Tomoya Uda 1999-05-25
5616947 Semiconductor device having an MIS structure 1997-04-01
5523623 Ohmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrode Manabu Yanagihara 1996-06-04