Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7585706 | Method of fabricating a semiconductor device | Kaoru Inoue, Toshinobu Matsuno, Yoshito Ikeda, Hiroyuki Masato | 2009-09-08 |
| 7449399 | Method for fabricating a semiconductor device for reducing a surface potential | Kaoru Inoue, Yoshito Ikeda, Yutaka Hirose | 2008-11-11 |
| 7307292 | Semiconductor device and method for fabricating the same | Kaoru Inoue, Toshinobu Matsuno, Yoshito Ikeda, Hiroyuki Masato | 2007-12-11 |
| 7122451 | Method for fabricating a semiconductor device including exposing a group III-V semiconductor to an ammonia plasma | Kaoru Inoue, Yoshito Ikeda, Yutaka Hirose | 2006-10-17 |
| 7105907 | Gallium nitride compound semiconductor device having schottky contact | Yoshito Ikeda, Kaoru Inoue, Yutaka Hirose | 2006-09-12 |
| 7037817 | Semiconductor device and method for fabricating the same | Kaoru Inoue, Yoshito Ikeda, Yutaka Hirose | 2006-05-02 |
| 6933181 | Method for fabricating semiconductor device | Kaoru Inoue, Yoshito Ikeda, Yutaka Hirose | 2005-08-23 |
| 6924516 | Semiconductor device | Kaoru Inoue, Hiroyuki Masato | 2005-08-02 |
| 6852612 | Semiconductor device and method for fabricating the same | Yoshito Ikeda, Hiroyuki Masato, Kaoru Inoue | 2005-02-08 |
| 6812505 | Semiconductor device | Kaoru Inoue, Hiroyuki Masato | 2004-11-02 |
| 6809352 | Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices | Yoshito Ikeda, Hiroyuki Masato, Kaoru Inoue | 2004-10-26 |
| 6774449 | Semiconductor device and method for fabricating the same | Yoshito Ikeda, Hiroyuki Masato, Kaoru Inoue | 2004-08-10 |
| 6770922 | Semiconductor device composed of a group III-V nitride semiconductor | Kaoru Inoue, Yoshito Ikeda, Yutaka Hirose | 2004-08-03 |
| 6737683 | Semiconductor device composed of a group III-V nitride semiconductor | Kaoru Inoue, Yoshito Ikeda, Yutaka Hirose | 2004-05-18 |
| 6653714 | Lateral bipolar transistor | Toshinobu Matsuno, Takeshi Fukuda, Kaoru Inoue, Daisuke Ueda | 2003-11-25 |
| 6639255 | GaN-based HFET having a surface-leakage reducing cap layer | Kaoru Inoue, Hiroyuki Masato | 2003-10-28 |
| 6593193 | Semiconductor device and method for fabricating the same | Kaoru Inoue, Toshinobu Matsuno, Yoshito Ikeda, Hiroyuki Masato | 2003-07-15 |
| 6531718 | Semiconductor device | Kaoru Inoue, Hiroyuki Masato | 2003-03-11 |
| 6503808 | Lateral bipolar transistor and method for producing the same | Toshinobu Matsuno, Takeshi Fukuda, Kaoru Inoue, Daisuke Ueda | 2003-01-07 |
| 6323538 | Bipolar transistor and method for fabricating the same | Takeshi Fukuda, Daisuke Ueda, Kaoru Inoue, Toshinobu Matsuno | 2001-11-27 |
| 6153499 | Method of manufacturing semiconductor device | Yoshiharu Anda, Toshinobu Matsuno, Kaoru Inoue, Manabu Yanagihara, Mitsuru Tanabe | 2000-11-28 |
| 5942772 | Semiconductor device and method of manufacturing the same | Mitsuru Nishitsuji, Takahiro Yokoyama, Akiyoshi Tamura | 1999-08-24 |
| 5872393 | RF semiconductor device and a method for manufacturing the same | Hiroyuki Sakai, Takayuki Yoshida, Yorito Ohta, Kaoru Inoue, Yoshito Ikeda | 1999-02-16 |
| 5585655 | Field-effect transistor and method of manufacturing the same | Yorito Ota, Mitsuru Nishitsuji, Hiroyuki Masato, Hiromasa Fujimoto | 1996-12-17 |
| 5370973 | Method of fabricating a fine structure electrode | — | 1994-12-06 |